X-On Electronics has gained recognition as a prominent supplier of TSM015NA03CR RLG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM015NA03CR RLG MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM015NA03CR RLG Taiwan Semiconductor

TSM015NA03CR RLG electronic component of Taiwan Semiconductor
TSM015NA03CR RLG Taiwan Semiconductor
TSM015NA03CR RLG MOSFETs
TSM015NA03CR RLG  Semiconductors

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See Product Specifications
Part No. TSM015NA03CR RLG
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET 30V 205A N-Channel Power MOSFET
Datasheet: TSM015NA03CR RLG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7249
10 : USD 0.6981
100 : USD 0.6981
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.9737
10 : USD 1.4923
100 : USD 1.1294
500 : USD 0.9568
1000 : USD 0.7843
2500 : USD 0.732
5000 : USD 0.7006
10000 : USD 0.6766
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSM015NA03CR RLG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM015NA03CR RLG and other electronic components in the MOSFETs category and beyond.

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TSM015NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 205A, 1.5m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 30 V DS 100% UIS and R tested g V = 10V 1.5 GS Compliant to RoHS directive 2011/65/EU and in R (max) m DS(on) accordance to WEEE 2002/96/EC V = 4.5V 2.0 GS Halogen-free according to IEC 61249-2-21 Q 33 nC g APPLICATIONS DC-DC Converters Battery Power Management ORing FET/Load Switching PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25C 205 C (Note 1) Continuous Drain Current I A D T = 25C 32 A Pulsed Drain Current I 820 A DM (Note 2) Single Pulse Avalanche Current I 46 A AS (Note 2) Single Pulse Avalanche Energy E 317 mJ AS T = 25C 104 C Total Power Dissipation P W D T = 125C 21 C T = 25C 2.6 A Total Power Dissipation P W D T = 125C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1.2 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1612 Not Recommended TSM015NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 1.8 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 30V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 30V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 32A -- 1.3 1.5 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = 4.5V, I = 28A -- 1.8 2.0 GS D (Note 3) V = 5V, I = 32A Forward Transconductance g -- 60 -- S DS D fs (Note 4) Dynamic V = 10V, V = 15V, GS DS Total Gate Charge Q -- 67 -- g I = 32A D Total Gate Charge Q -- 33 -- g nC V = 4.5V, V = 15V, GS DS Gate-Source Charge Q -- 12 -- gs I = 28A D Gate-Drain Charge Q -- 13 -- gd Input Capacitance C -- 4243 -- iss V = 0V, V = 15V GS DS Output Capacitance C -- 1014 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 252 -- rss Gate Resistance f = 1.0MHz R 0.4 1.3 2.6 g (Note 4) Switching Turn-On Delay Time t -- 5.8 -- d(on) Turn-On Rise Time t -- 17 -- r V = 10V, V = 15V, GS DS ns Turn-Off Delay Time I = 32A, R = 2, t -- 33 -- D G d(off) Turn-Off Fall Time t -- 11 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1.2 V V = 0V, I = 32A SD GS S Reverse Recovery Time t -- 38 -- ns rr I = 32A, S Reverse Recovery Charge Q -- 36 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 46A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM015NA03CR RLG PDFN56 2,500pcs / 13 Reel 2 Version: A1612 Not Recommended

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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