X-On Electronics has gained recognition as a prominent supplier of SQA442EJ-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQA442EJ-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQA442EJ-T1_GE3 Vishay

SQA442EJ-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQA442EJ-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds; +/-20V Vgs PowerPAK SC-70-6L
Datasheet: SQA442EJ-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6787 ea
Line Total: USD 0.68 
Availability - 30589
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
270
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4339
10 : USD 0.3544
25 : USD 0.3507
100 : USD 0.3164
250 : USD 0.2298

2910
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6164
10 : USD 0.513
30 : USD 0.4614
100 : USD 0.4116
500 : USD 0.381
1000 : USD 0.3637

30589
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6787
10 : USD 0.4466
100 : USD 0.3135
500 : USD 0.2695
1000 : USD 0.2453
3000 : USD 0.2035
9000 : USD 0.1969
24000 : USD 0.1947
45000 : USD 0.1892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the SQA442EJ-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQA442EJ-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm SQA442EJ www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SC-70-6L Single TrenchFET power MOSFET D D 6 d AEC-Q101 qualified S 5 4 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S 1 7 2 D 3 D D 1 G Top View Bottom View Marking Code: QDXXXX PRODUCT SUMMARY G V (V) 60 DS R ( ) at V = 10 V 0.032 DS(on) GS R ( ) at V = 4.5 V 0.048 DS(on) GS I (A) 9 D S Configuration Single N-Channel MOSFET Package PowerPAK SC-70 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 9 C a Continuous drain current I D T = 125 C 8.3 C a Continuous source current (diode conduction) I 9 A S a Pulsed drain current I 24.5 DM Single pulse avalanche current I 13 AS L = 0.1 mH Single pulse avalanche energy E 8.4 mJ AS T = 25 C 13.6 C b Maximum power dissipation P W D T = 125 C 4.5 C Operating junction and storage temperature range T , T -55 to +175 J stg C e, f Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 90 thJA C/W Junction-to-case (drain) R 11 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mmSQA442EJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 250 GS DS J a On-state drain current I V = 4.5 V V 5 V 10 - - A D(on) GS DS V = 10 V I = 3 A - 0.026 0.032 GS D V = 10 V I = 3 A, T = 125 C - - 0.058 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 3 A, T = 175 C - - 0.065 GS D J V = 4.5 V I = 3 A - 0.045 0.048 GS D b Forward transconductance g V = 15 V, I = 6 A - 21 - S fs DS D b Dynamic Input capacitance C - 509 636 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 242 302 pF oss GS DS Reverse transfer capacitance C - 14.6 18.3 rss c Total gate charge Q -7.75 9.7 g c Gate-source charge Q V = 10 V V = 30 V, I = 5 A -1.53 - nC gs GS DS D c Gate-drain charge Q -1.2 - gd Gate resistance R f = 1 MHz 0.24 0.41 0.65 g c Turn-on delay time t -7.3 9.1 d(on) c Rise time t -2 2.5 V = 30 V, R = 6 r DD L ns c I 5 A, V = 4.5 V, R = 1 k Turn-off delay time t D GEN g - 12 15.5 d(off) c Fall time t -1.4 1.8 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 24 A SM Forward voltage V I = 4.5 A, V = 0 V - 0.75 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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