SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 100 % R and UIS Tested g V (V) 30 DS d AEC-Q101 Qualified R ( ) at V = 10 V 0.0032 DS(on) GS Material categorization: R ( ) at V = 4.5 V 0.0039 DS(on) GS For definitions of compliance please see I (A) 100 D www.vishay.com/doc 99912 Configuration Single D TO-252 G Drain Connected to Tab S GD S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD100N03-3m2L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 100 C a Continuous Drain Current I D T = 125 C 89 C a Continuous Source Current (Diode Conduction) I 100 A S b Pulsed Drain Current I 150 DM Single Pulse Avalanche Current I 60 AS L = 0.1 mH Single Pulse Avalanche Energy E 180 mJ AS T = 25 C 136 C b Maximum Power Dissipation P W D T = 125 C 45 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S13-0452-Rev. A, 04-Mar-13 Document Number: 62753 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQD100N03-3m2L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 30 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 30 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 30 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 20 A - 0.0027 0.0032 GS D V = 10 V I = 20 A, T = 125 C - - 0.0049 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 20 A, T = 175 C - - 0.0058 GS D J V = 4.5 V I = 15 A - 0.0031 0.0039 GS D b Forward Transconductance g V = 15 V, I = 20 A - 122 - S fs DS D b Dynamic Input Capacitance C - 5053 6316 iss Output Capacitance C -V = 0 V V = 15 V, f = 1 MHz9211151 pF oss GS DS Reverse Transfer Capacitance C -377471 rss c Total Gate Charge Q - 77 116 g c Gate-Source Charge Q -V = 10 V V = 15 V, I = 50 A14.3- nC gs GS DS D c Gate-Drain Charge Q -11- gd R Gate Resistance f = 1 MHz 1.14 2.28 3.42 g c Turn-On Delay Time t -10 15 d(on) c Rise Time t -10 15 r V = 15 V, R = 0.3 DD L ns c I 50 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -4263 d(off) c Fall Time t -1015 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 150 A SM Forward Voltage V I = 40 A, V = 0 V - 0.85 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0452-Rev. A, 04-Mar-13 Document Number: 62753 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000