X-On Electronics has gained recognition as a prominent supplier of SQA470EJ-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQA470EJ-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQA470EJ-T1_GE3 Vishay

SQA470EJ-T1_GE3 electronic component of Vishay
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Part No.SQA470EJ-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V PowerPAK SC-70 AEC-Q101 Qualified
Datasheet: SQA470EJ-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.671 ea
Line Total: USD 0.67 
Availability - 5523
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5523
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.671
10 : USD 0.5324
100 : USD 0.3465
500 : USD 0.2728
1000 : USD 0.2486
3000 : USD 0.2024
9000 : USD 0.1892

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
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Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
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Cnhts
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We are delighted to provide the SQA470EJ-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQA470EJ-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm SQA470EJ www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK SC-70-6L Single TrenchFET power MOSFET D D 6 d AEC-Q101 qualified S 5 4 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S 1 7 2 D 3 D D 1 G Top View Bottom View Marking Code: QCXXXX PRODUCT SUMMARY G V (V) 30 DS R ( ) at V = 4.5 V 0.065 DS(on) GS R ( ) at V = 2.5 V 0.095 DS(on) GS I (A) 2.25 D S Configuration Single N-Channel MOSFET Package PowerPAK SC-70 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 30 DS V Gate-source voltage V 12 GS T = 25 C 2.25 C a Continuous drain current I D T = 125 C 2.25 C a Continuous source current (diode conduction) I 2.25 A S a Pulsed drain current I 9 DM Single pulse avalanche current I 9 AS L = 0.1 mH Single pulse avalanche energy E 4mJ AS T = 25 C 13.6 C b Maximum power dissipation P W D T = 125 C 4.5 C Operating junction and storage temperature range T , T -55 to +175 J stg C e, f Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 90 thJA C/W Junction-to-case (drain) R 11 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0424-Rev. A, 03-Apr-17 Document Number: 75522 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mmSQA470EJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 0.45 0.6 1.1 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = 30 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 30 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 30 V, T = 175 C - - 250 GS DS J a On-state drain current I V = 4.5 V V 5 V 10 - - A D(on) GS DS V = 4.5 V I = 3 A - 0.038 0.065 GS D V = 4.5 V I = 3 A, T = 125 C - - 0.077 GS D J a Drain-source on-state resistance R DS(on) V = 4.5 V I = 3 A, T = 175 C - - 0.090 GS D J V = 2.5 V I = 3 A - 0.048 0.095 GS D b Forward transconductance g V = 15 V, I = 2 A - 16 - S fs DS D b Dynamic Input capacitance C - 312 440 iss Output capacitance C V = 0 V V = 20 V, f = 1 MHz -56 80 pF oss GS DS Reverse transfer capacitance C -29 41 rss c Total gate charge Q -4.6 6 g c Gate-source charge Q V = 4.5 V V = 15 V, I = 4.2 A -0.65 - nC gs GS DS D c Gate-drain charge Q -0.9 - gd Gate resistance R f = 1 MHz 2.1 3.6 5.7 g c Turn-on delay time t -7.3 11 d(on) c Rise time t -18 26 V = 10 V, R = 10 r DD L ns c I 1 A, V = 4.5 V, R = 1 Turn-off delay time t D GEN g -21 32 d(off) c Fall time t -9.5 14 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 24 A SM Forward voltage V I = 4.5 A, V = 0 V - 0.75 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0424-Rev. A, 03-Apr-17 Document Number: 75522 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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