SQD10950E www.vishay.com Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 C MOSFET FEATURES TOTO-252 TrenchFET power MOSFET Package with low thermal resistance Drain connected to tab 100 % R and UIS tested g AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S D D G Top View PRODUCT SUMMARY V (V) 250 G DS R ( ) at V = 10 V 0.1620 DS(on) GS R ( ) at V = 7.5 V 0.1800 DS(on) GS I (A) 11.5 D S Configuration Single N-Channel MOSFET Package TO-252 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 11.5 C Continuous drain current I D T = 125 C 6.6 C a Continuous source current (diode conduction) I 50 A S b Pulsed drain current I 30 DM Single pulse avalanche current I 10 AS L = 0.1 mH Single pulse avalanche energy E 5mJ AS T = 25 C 62 C b Maximum power dissipation P W D T = 125 C 20 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 50 thJA C/W Junction-to-case (drain) R 2.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S19-0200-Rev. A, 04-Mar-2019 Document Number: 79721 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD10950E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 250 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 250 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 250 V, T = 175 C - - 250 A GS DS J a On-state drain current I V = 10 V V 5 V 12 - - A D(on) GS DS V = 10 V I = 12 A - 0.1342 0.1620 GS D V = 7.5 V I = 10 A - 0.1443 0.1800 GS D a Drain-source on-state resistance R DS(on) V = 10 V I = 12 A, T = 125 C - - 0.3437 GS D J V = 10 V I = 12 A, T = 175 C - - 0.4560 GS D J b Forward transconductance g V = 15 V, I = 12 A - 12 - S fs DS D b Dynamic Input capacitance C - 558 785 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 308 435 pF oss GS DS Reverse transfer capacitance C -11 16 rss c Total gate charge Q -10.6 16 g c Gate-source charge Q V = 10 V V = 125 V, I = 10 A -3.1 - nC gs GS DS D c Gate-drain charge Q -2.8 - gd Gate resistance R f = 1 MHz 1.9 3.8 5.7 g c Turn-on delay time t -8 20 d(on) c Rise time t -3 10 r V = 125 V, R = 12.5 DD L ns c I 10 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -15 30 d(off) c Fall time t -3 10 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 30 A SM Forward voltage V I = 15 A, V = 0 V - 0.9 1.5 V SD F GS Body diode reverse recovery time t - 127 260 ns rr Body diode reverse recovery charge Q - 583 1170 nC rr I = 10 A, di/dt = 100 A/s F Reverse recovery fall time t -88 - a ns Reverse recovery rise time t -39 - b Body diode peak reverse recovery current I --8.6 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0200-Rev. A, 04-Mar-2019 Document Number: 79721 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000