X-On Electronics has gained recognition as a prominent supplier of SQD19P06-60L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD19P06-60L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQD19P06-60L_GE3 Vishay

SQD19P06-60L_GE3 electronic component of Vishay
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Part No.SQD19P06-60L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 20A 46W AEC-Q101 Qualified
Datasheet: SQD19P06-60L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.606 ea
Line Total: USD 1.61 
Availability - 9278
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1303
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0943
10 : USD 0.9235
30 : USD 0.8288
100 : USD 0.7246
500 : USD 0.677
1000 : USD 0.6543

9278
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.606
10 : USD 1.166
100 : USD 0.8998
500 : USD 0.7458
1000 : USD 0.6952
2000 : USD 0.6941
10000 : USD 0.6347

1280
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.89
10 : USD 1.5428
20 : USD 0.8918
53 : USD 0.8428
1000 : USD 0.8414

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQD19P06-60L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD19P06-60L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQD19P06-60L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 60 DS Definition R ( ) at V = - 10 V 0.055 DS(on) GS TrenchFET Power MOSFET R ( ) at V = - 4.5 V 0.100 DS(on) GS Package with Low Thermal Resistance I (A) - 20 D 100 % R and UIS Tested g Configuration Single Compliant to RoHS Directive 2002/95/EC d AEC-Q101 Qualified S TO-252 G Drain Connected to Tab GD S D Top View P-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD19P06-60L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 20 C Continuous Drain Current I D T = 125 C - 11 C a Continuous Source Current (Diode Conduction) I - 25 A S b Pulsed Drain Current I - 80 DM Single Pulse Avalanche Current I - 24 AS L = 0.1 mH Single Pulse Avalanche Energy E 28 mJ AS T = 25 C 46 C b Maximum Power Dissipation P W D T = 125 C 15 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 3.2 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S11-2065-Rev. C, 24-Oct-11 Document Number: 65158 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQD19P06-60L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 60 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 60 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 60 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 20 - - A D(on) GS DS V = - 10 V I = - 19 A - 0.046 0.055 GS D V = - 10 V I = - 19 A, T = 125 C - - 0.095 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 19 A, T = 175 C - - 0.125 GS D J V = - 4.5 V I = - 10 A - 0.075 0.100 GS D a Forward Transconductance g V = - 15 V, I = - 17 A - 20 - S fs DS D b Dynamic Input Capacitance C - 1192 1490 iss Output Capacitance C -V = 0 V V = - 25 V, f = 1 MHz160200 pF oss GS DS Reverse Transfer Capacitance C -96120 rss c Total Gate Charge Q -27 41 g c Gate-Source Charge Q -3V = - 10 V V = - 30 V, I = - 19 A.9- nC gs GS DS D c Gate-Drain Charge Q -5.9- gd Gate Resistance R f = 1 MHz 2.3 4.7 7.1 g c Turn-On Delay Time t -7 11 d(on) c Rise Time t -9 14 r V = - 30 V, R = 1.6 DD L ns c I - 19 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -2538 d(off) c Fall Time t -1218 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- - 80 A SM Forward Voltage V I = - 10 A, V = 0 V - - 0.85 - 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2065-Rev. C, 24-Oct-11 Document Number: 65158 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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