SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) - 60 DS PowerPAK Package R ( ) at V = - 10 V 0.065 DS(on) GS - Low Thermal Resistance, R thJC R ( ) at V = - 4.5 V 0.110 DS(on) GS - Low 1.07 mm Profile I (A) - 5.7 Fast Switching D Configuration Single AEC-Q101 Qualified 100 % R Tested g PowerPAK 1212-8 S Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 S 3.3 mm 3.3 mm 1 S G 2 S 3 G 4 D 8 D 7 D 6 D D 5 Bottom View P-Channel MOSFET Part Marking Code: Q002 ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free SQ7415EN-T1-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage V - 60 - 60 DS V Gate-Source Voltage V 20 20 GS T = 25 C - 5.7 - 3.6 A a Continuous Drain Current I D T = 70 C - 4.6 - 2.9 A A a Continuous Source Current (Diode Conduction) I - 3.2 - 1.3 S b Pulsed Drain Current I - 30 - 30 DM T = 25 C 3.8 1.5 A b Maximum Power Dissipation P W D T = 70 C 2 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to + 175 - 55 to + 175 J stg C d, e Soldering Recommendations (Peak Temperature) 260 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYPICALMAXIMUMUNIT 26 33 Junction-to-Ambient R thJA c PCB Mount 65 81 C/W Junction-to-Case (Drain) R 1.9 2.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-1462 Rev. E, 01-Jul-13 Document Number: 74488 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ7415EN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - - 3 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V, V = - 60 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V, V = - 60 V, T = 125 C - - - 5 A DSS GS DS J V = 0 V, V = - 60 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V, V - 5 V - 20 - - A D(on) GS DS V = - 10 V, I = - 5.7 A - 0.054 0.065 GS D V = - 4.5 V, I = - 4.4 A - 0.090 0.110 GS D a Drain-Source On-State Resistance R DS(on) V = - 10 V, I = - 5.7 A, T = 125 C - - 0.104 GS D j V = - 10 V, I = - 5.7 A, T = 175 C - - 0.127 GS D j a Forward Transconductance g V = - 15 V, I = - 5.7 A 11 - - S fs DS D b Dynamic Input Capacitance C - 940 1175 iss Output Capacitance C -V = 0 V, V = 25 V, f = 1 MHz151189 pF oss GS DS Reverse Transfer Capacitance C -5468 rss c Total Gate Charge Q -15 25 g c Gate-Source Charge Q -4V = - 10 V, V = - 30 V, I = - 5.7 A- nC gs GS DS D c Gate-Drain Charge Q -3.2- gd Gate Resistance R f = 1 MHz 0.8 1.8 2.8 g c V = - 30 V, R = 30 Turn-On Delay Time t -12 20 d(on) DD L c Rise Time t -12 20 r ns c Turn-Off Delay Time t -2235 d(off) c Fall Time t -1625 f b Source-Drain Diode Ratings and Characteristics T = 25 C C a Pulsed Current I -- - 30 A SM Forward Voltage V I = 85 A, V = 0 V - - - 1.2 V SD F GS Reverse Recovery Time t I = 3.2 A, dI/dt = 100 A/s - 45 90 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1462 Rev. E, 01-Jul-13 Document Number: 74488 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000