X-On Electronics has gained recognition as a prominent supplier of SQ2308CES-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2308CES-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ2308CES-T1_GE3 Vishay

SQ2308CES-T1_GE3 electronic component of Vishay
SQ2308CES-T1_GE3 Vishay
SQ2308CES-T1_GE3 MOSFETs
SQ2308CES-T1_GE3  Semiconductors

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See Product Specifications
Part No. SQ2308CES-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
Datasheet: SQ2308CES-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4489 ea
Line Total: USD 2.24 
Availability - 3865
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3865
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.4489
50 : USD 0.3114
150 : USD 0.2311
500 : USD 0.1959
3000 : USD 0.1803
6000 : USD 0.1708

1752
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.84
10 : USD 0.5334
42 : USD 0.4214
100 : USD 0.385
500 : USD 0.3836

72
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 75
Multiples : 1
75 : USD 0.2607

2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 183
Multiples : 1
183 : USD 0.3554
190 : USD 0.3418
285 : USD 0.2278
5000 : USD 0.2042

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ2308CES-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2308CES-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ2308CES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 60 DS c AEC-Q101 Qualified R () at V = 10 V 0.150 DS(on) GS 100 % R and UIS Tested g R () at V = 4.5 V 0.164 DS(on) GS Material categorization: I (A) 2.3 D For definitions of compliance please see www.vishay.com/doc 99912 Configuration Single D SOT-23 (TO-236) D 3 G 2 S S 1 G N-Channel MOSFET Top View Marking Code: 8X ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2308CES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS T = 25 C 2.3 C I Continuous Drain Current D T = 125 C 1.3 C I Continuous Source Current (Diode Conduction) 2.4 A S a Pulsed Drain Current I 9 DM Single Pulse Avalanche Current I 7 AS L = 0.1 mH E Single Pulse Avalanche Energy 2.5 mJ AS T = 25 C 2 C a P Maximum Power Dissipation W D T = 125 C 0.6 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient R 120 PCB Mount thJA C/W Junction-to-Foot (Drain) R 80 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). c. Parametric verification ongoing. S14-0552-Rev. A, 24-Mar-14 Document Number: 63877 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ2308CES www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN. MAX. UNIT TYP. Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V -- 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C -- 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C -- 150 GS DS J a I V = 10 V V 5 V 10 - - A On-State Drain Current D(on) GS DS V = 10 V I = 2.3 A - 0.125 0.150 GS D V = 10 V I = 2.3 A, T = 125 C - - 0.250 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V I = 2.3 A, T = 175 C - - 0.325 GS D J V = 4.5 V I = 2.1 A - 0.136 0.164 GS D b g V = 15 V, I = 2.3 A Forward Transconductance -5.5 - S fs DS D b Dynamic C Input Capacitance - 164 205 iss Output Capacitance C V = 0 V V = 30 V, f = 1 MHz -22 28 pF oss GS DS Reverse Transfer Capacitance C -14 18 rss c Q Total Gate Charge -3.5 5.3 g c Q V = 10 V V = 30 V, I = 2 A -0.6 - nC Gate-Source Charge gs GS DS D c Q -0.7 - Gate-Drain Charge gd Gate Resistance R f = 1 MHz 2.9 5.84 9 g c t Turn-On Delay Time -4 6 d(on) c t -9 13 Rise Time r V = 30 V, R = 15 DD L ns I 2 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -12 17 d(off) c t -12 18 Fall Time f b Source-Drain Diode Ratings and Characteristics a I Pulsed Current -- 9 A SM Forward Voltage V I = 1.6 A, V = 0 -0.85 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0552-Rev. A, 24-Mar-14 Document Number: 63877 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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