X-On Electronics has gained recognition as a prominent supplier of SQ2310ES-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SQ2310ES-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SQ2310ES-T1-GE3 Vishay

SQ2310ES-T1-GE3 electronic component of Vishay

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Part No.	SQ2310ES-T1-GE3
Manufacturer:	Vishay
Category:	MOSFET
Description:	MOSFET 20V 6A 2W Thin-film, small form factor linear potentiometer module with 10 turn, 10 kO resistance and solder terminals.
Datasheet:	SQ2310ES-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

35: USD 0.6369 ea
Line Total: USD 22.29

Availability - 0

MOQ: 35 Multiples: 1
Pack Size: 1

SQ2310ES-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 31 Jul to Tue. 06 Aug MOQ : 1 Multiples : 1	1 : USD 0.7627 10 : USD 0.4576 25 : USD 0.4484 50 : USD 0.4484 100 : USD 0.4484

0 Ship by Wed. 31 Jul to Tue. 06 Aug MOQ : 32 Multiples : 1	32 : USD 0.4484

0 Ship by Wed. 31 Jul to Tue. 06 Aug MOQ : 32 Multiples : 1	32 : USD 0.4473

0 Ship by Wed. 31 Jul to Tue. 06 Aug MOQ : 35 Multiples : 1	35 : USD 0.6369 100 : USD 0.4891 250 : USD 0.444 500 : USD 0.4351

Specifications

Manufacturer Vishay Vishay
Product Category MOSFET MOSFET
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23 SOT - 23
Packaging Reel Reel
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current 6 A 6 A
Drain-Source Breakdown Voltage 20 V 20 V
Forward Transconductance - Min 27 S 27 S
Power Dissipation 2 W 2 W
Rds On 30 Mohms 30 Mohms
Fall Time 9 ns 9 ns
Gate Charge Qg 4.5 nC 4.5 nC
Rise Time 8 ns 8 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 21 ns 21 ns

We are delighted to provide the SQ2310ES-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2310ES-T1-GE3 and other electronic components in the MOSFET category and beyond.

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Additional Infomation About Product

The SQ2310ES-T1-GE3 is a Vishay N-Channel enhancement mode MOSFET transistor with a maximum drain-source voltage rating of 60V and a 2.3A maximum drain current rating. It is a surface mount transistor with a TO-252 (DPAK) package and can be used in switching and amplification applications. The transistor has a small gate capacitance and low on-state resistance making it suitable for high frequency applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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