X-On Electronics has gained recognition as a prominent supplier of SQ3456BEV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ3456BEV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ3456BEV-T1-GE3 Vishay

SQ3456BEV-T1-GE3 electronic component of Vishay
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Part No.SQ3456BEV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 7.8A 4W N-Ch Automotive
Datasheet: SQ3456BEV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7475 ea
Line Total: USD 0.75 
Availability - 98
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
98
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7475
10 : USD 0.667
100 : USD 0.4542
500 : USD 0.3795
1000 : USD 0.3232
3000 : USD 0.2933
6000 : USD 0.2863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SQ3456BEV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ3456BEV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SQ3456BEV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 30 DS c AEC-Q101 Qualified R ( ) at V = 10 V 0.035 DS(on) GS 100 % R and UIS Tested g R ( ) at V = 4.5 V 0.052 DS(on) GS Material categorization: I (A) 7.8 D For definitions of compliance please see Configuration Single www.vishay.com/doc 99912 TSOP-6 (1, 2, 5, 6) D Top V iew 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Marking Code: 8Lxxx N-Channel MOSFET ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3456BEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 7.8 C I Continuous Drain Current D T = 125 C 4.5 C Continuous Source Current (Diode Conduction) I 5 A S a I Pulsed Drain Current 31 DM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 4 C a P W Maximum Power Dissipation D T = 125 C 1.3 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b R Junction-to-Ambient PCB Mount 110 thJA C/W Junction-to-Foot (Drain) R 38 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). c. Parametric verification ongoing. S12-1848-Rev. B, 30-Jul-12 Document Number: 67934 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ3456BEV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 30 V -- 1 GS DS I V = 0 V V = 30 V, T = 125 C Zero Gate Voltage Drain Current -- 50 A DSS GS DS J V = 0 V V = 30 V, T = 175 C - - 150 GS DS J a I V = 10 V V 5 V 10 - - A On-State Drain Current D(on) GS DS V = 10 V I = 6 A - 0.028 0.035 GS D V = 4.5 V I = 4.9 A - 0.036 0.052 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V I = 6 A, T = 125 C - - 0.054 GS D J V = 10 V I = 6 A, T = 175 C - - 0.064 GS D J b g V = 15 V, I = 5 A Forward Transconductance -21 - S fs DS D b Dynamic Input Capacitance C - 295 370 iss Output Capacitance C V = 0 V V = 15 V, f = 1 MHz -67 85 pF oss GS DS Reverse Transfer Capacitance C -25 35 rss c Q Total Gate Charge -6 10 g c Q V = 10 V V = 15 V, I = 6 A -1.2 - nC Gate-Source Charge gs GS DS D c Q -1 - Gate-Drain Charge gd Gate Resistance R f = 1 MHz 3.0 6.65 11 g c t Turn-On Delay Time -6 9 d(on) c t -12 18 Rise Time r V = 15 V, R = 2.5 DD L ns c I 6 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -13 20 d(off) c t -8 12 Fall Time f b Source-Drain Diode Ratings and Characteristics a I Pulsed Current -- 31 A SM Forward Voltage V I = 3 A, V = 0 V -0.8 1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1848-Rev. B, 30-Jul-12 Document Number: 67934 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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