X-On Electronics has gained recognition as a prominent supplier of SQ3457EV-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ3457EV-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ3457EV-T1_GE3 Vishay

SQ3457EV-T1_GE3 electronic component of Vishay
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Part No.SQ3457EV-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Channel 30V AEC-Q101 Qualified
Datasheet: SQ3457EV-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4324 ea
Line Total: USD 0.43 
Availability - 196626
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1470
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3201
10 : USD 0.3151
25 : USD 0.3102
100 : USD 0.3052
250 : USD 0.3003
500 : USD 0.2954
1000 : USD 0.2904

29
Ship by Tue. 26 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4424
10 : USD 0.4328
30 : USD 0.4252
100 : USD 0.4176

196626
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4324
10 : USD 0.4301
100 : USD 0.3404
500 : USD 0.2978
1000 : USD 0.2772
3000 : USD 0.261
6000 : USD 0.2576
9000 : USD 0.2495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ3457EV-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ3457EV-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ3457EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition V (V) - 30 DS TrenchFET Power MOSFET R ( ) at V = 10 V 0.065 DS(on) GS d AEC-Q101 Qualified R ( ) at V = 4.5 V 0.100 DS(on) GS 100 % R and UIS Tested g I (A) - 6.8 D Compliant to RoHS Directive 2002/95/EC Configuration Single TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Marking Code: 8Ixxx ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3457EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 6.8 C a Continuous Drain Current I D T = 125 C - 3.9 C a Continuous Source Current (Diode Conduction) I - 6.3 A S b Pulsed Drain Current I - 27 DM Single Pulse Avalanche Current I - 14 AS L = 0.1 mH Single Pulse Avalanche Energy E 10 mJ AS T = 25 C 5 C b Maximum Power Dissipation P W D T = 125 C 1.7 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 110 thJA C/W Junction-to-Foot (Drain) R 30 thJF Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S11-2124-Rev. B, 07-Nov-11 Document Number: 66715 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ3457EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 30 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 30 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 30 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V 5 V - 10 - - A D(on) GS DS V = - 10 V I = - 6 A - 0.035 0.065 GS D a Drain-Source On-State Resistance R DS(on) V = - 4.5 V I = - 4.9 A - 0.072 0.100 GS D b Forward Transconductance g V = - 15 V, I = - 5 A - 9 - S fs DS D b Dynamic Input Capacitance C - 565 705 iss Output Capacitance C -V = 0 V V = - 15 V, f = 1 MHz140180 pF oss GS DS Reverse Transfer Capacitance C -98120 rss c Total Gate Charge Q -14 21 g c Gate-Source Charge Q -2V = - 10 V V = - 15 V, I = - 5 A.13 nC gs GS DS D c Gate-Drain Charge Q -35 gd Gate Resistance R f = 1 MHz 2 6.5 11 g c Turn-On Delay Time t -6 9 d(on) c Rise Time t -9 14 r V = - 15 V, R = 3 DD L ns c I - 5 A, V = - 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -1827 d(off) c Fall Time t -69 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- - 27 A SM Forward Voltage V I = - 1.6 A, V = 0 - - 0.8 - 1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2124-Rev. B, 07-Nov-11 Document Number: 66715 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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