X-On Electronics has gained recognition as a prominent supplier of SQ4917EY-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ4917EY-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ4917EY-T1_GE3 Vishay

SQ4917EY-T1_GE3 electronic component of Vishay
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Part No.SQ4917EY-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual P-Channel 60V AEC-Q101 Qualified
Datasheet: SQ4917EY-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.969 ea
Line Total: USD 1.97 
Availability - 23279
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.7294
10 : USD 1.4882
30 : USD 1.3376
100 : USD 1.1832
500 : USD 1.1116
1000 : USD 1.0813

23279
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.969
10 : USD 1.364
100 : USD 1.0769
250 : USD 0.9537
500 : USD 0.9306
1000 : USD 0.8503
2500 : USD 0.8503
5000 : USD 0.8415
10000 : USD 0.8162

830
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 8
Multiples : 1
8 : USD 1.4732
10 : USD 1.2916
25 : USD 1.2841
50 : USD 1.2769
100 : USD 1.097
250 : USD 1.0599
500 : USD 0.9903

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ4917EY-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ4917EY-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 C MOSFET FEATURES SO-8 Dual D TrenchFET power MOSFET 2 D 5 2 c AEC-Q101 qualified D 6 1 D 7 100 % R and UIS tested 1 g 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 G 33 2 SS 22 S S 22 1 2 GG 11 1 S 1 Top View G G 1 2 PRODUCT SUMMARY V (V) -60 DS R () at V = -10 V 0.0480 DS(on) GS D D 1 2 R () at V = -4.5 V 0.0612 DS(on) GS P-Channel MOSFET P-Channel MOSFET I (A) per leg -8 D Configuration Dual ORDERING INFORMATION Package SO-8 SQ4917EY Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT V Drain-source voltage -60 DS V Gate-source voltage V 20 GS T = 25 C -8 C I Continuous drain current D T = 125 C -4.75 C Continuous source current (diode conduction) I -4.5 A S a I -32 Pulsed drain current DM I Single pulse avalanche current -22.4 AS L = 0.1 mH Single pulse avalanche energy E 25 mJ AS T = 25 C 5 C a P W Maximum power dissipation D T = 125 C 1.67 C , T Operating junction and storage temperature range T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-ambient PCB mount R 110 thJA C/W Junction-to-foot (drain) R 30 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. When mounted on 1 square PCB (FR-4 material) c. Parametric verification ongoing S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ4917EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN. MAX. UNIT TYP. Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V -- -1 GS DS Zero gate voltage drain current I V = 0 V V = -60 V, T = 125 C -- -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C -- -150 GS DS J a I V = -10 V V -5 V On-state drain current -30 - - A D(on) GS DS V = -10 V I = -4.3 A - 0.0400 0.0480 GS D V = -10 V I = -4.3 A, T = 125 C - - 0.0780 GS D J a R Drain-source on-state resistance DS(on) V = -10 V I = -4.3 A, T = 175 C - - 0.0960 GS D J V = -4.5 V I = -3.8 A - 0.0510 0.0612 GS D b g V = -15 V, I = -4.3 A -13 - S Forward transconductance fs DS D b Dynamic Input capacitance C - 1530 1910 iss C V = 0 V V = -30 V, f = 1 MHz Output capacitance - 334 417 pF oss GS DS Reverse transfer capacitance C - 114 142 rss c Q -43.4 65 Total gate charge g c Q = -10 V V = -30 V, I = -5 A Gate-source charge V -4.7 - nC gs GS DS D c Q -9 - Gate-drain charge gd R Gate resistance f = 1 MHz 1.3 2.5 4 g c t -11 17 Turn-on delay time d(on) c t Rise time -11 17 r V = -30 V, R = 8.8 DD L ns I -5 A, V = -10 V, R = 1 c D GEN g t -35 52 Turn-off delay time d(off) c t -6 9 Fall time f b Source-Drain Diode Ratings and Characteristics a I -- -32 A Pulsed current SM V I = -2.8 A, V = 0 V Forward voltage - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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