X-On Electronics has gained recognition as a prominent supplier of SQ4946AEY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ4946AEY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ4946AEY-T1-GE3 Vishay

SQ4946AEY-T1-GE3 electronic component of Vishay
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Part No.SQ4946AEY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 60V 7A 4W
Datasheet: SQ4946AEY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2456 ea
Line Total: USD 2.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.8826
5000 : USD 0.8737
10000 : USD 0.865
15000 : USD 0.8563
20000 : USD 0.8479
25000 : USD 0.8268
30000 : USD 0.8186
50000 : USD 0.8104
100000 : USD 0.8022

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.6692

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.2456
10 : USD 0.832
100 : USD 0.6476
500 : USD 0.5889
1000 : USD 0.5143
2500 : USD 0.5063
5000 : USD 0.5053
10000 : USD 0.4825
25000 : USD 0.4675

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.7218

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.7185

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.7218

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SQ4946AEY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ4946AEY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SQ4946AEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS 100 % R and UIS tested g R () at V = 10 V 0.040 DS(on) GS AEC-Q101 qualified R () at V = 4.5 V 0.055 DS(on) GS Material categorization: I (A) per leg 7 D for definitions of compliance please Configuration Dual see www.vishay.com/doc 99912 SO-8 Dual D 2 D D 1 2 D 5 2 D 6 1 D 7 1 8 G G 1 2 4 G 33 2 SS S S 22 1 2 22 11 GG 1 N-Channel MOSFET N-Channel MOSFET S 1 Top View ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4946AEY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 7 C Continuous Drain Current I D T = 125 C 4 C a Continuous Source Current (Diode Conduction) I 3.6 A S b Pulsed Drain Current I 28 DM Single Pulse Avalanche Current I 18 AS L = 0.1 mH Single Pulse Avalanche Energy E 16.2 mJ AS T = 25 C 4 C b Maximum Power Dissipation P W D T = 125 C 1.3 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 110 thJA C/W Junction-to-Foot (Drain) R 34 thJF Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-1462-Rev. F, 15-Jun-15 Document Number: 71506 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ4946AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 20 - - A D(on) GS DS V = 10 V I = 4.5 A - 0.033 0.040 GS D V = 10 V I = 4.5 A, T = 125 C - - 0.066 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 4.5 A, T = 175 C - - 0.081 GS D J V = 4.5 V I = 4 A - 0.045 0.055 GS D f Forward Transconductance g V = 15 V, I = 4.5 A - 15 - S fs DS D b Dynamic Input Capacitance C - 600 750 iss Output Capacitance C V = 0 V V = 25 V, f = 1 MHz - 110 140 pF oss GS DS Reverse Transfer Capacitance C -50 62 rss c Total Gate Charge Q -11.7 18 g c Gate-Source Charge Q V = 10 V V = 30 V, I = 5.3 A -1.8 2.7 nC gs GS DS D c Gate-Drain Charge Q -2.8 4.2 gd Gate Resistance R f = 1 MHz 1.3 - 6 g c Turn-On Delay Time t -7 11 d(on) c Rise Time t -3.3 5 r V = 30 V, R = 6.8 DD L ns I 4.4 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t - 22.4 33.5 d(off) c Fall Time t -2.1 3.2 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 28 A SM Forward Voltage V I = 2 A, V = 0 V - 0.75 1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1462-Rev. F, 15-Jun-15 Document Number: 71506 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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