3.3 mm3.3 mm SQ7414AENW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS Low thermal resistance PowerPAK 1212-8 R () at V = 10 V 0.023 DS(on) GS package with 1.07 mm profile R () at V = 4.5 V 0.028 DS(on) GS PWM optimized I (A) 18 D 100 % R and UIS tested g Configuration Single AEC-Q101 qualified PowerPAK 1212-8W Single Wettable flank terminals D D 8 Material categorization: for definitions of compliance DD 77 DD 66 please see www.vishay.com/doc 99912 55 D 11 22 SS 33 SS G 44 SS 1 G Top View Bottom View N-Channel MOSFET S Marking Code: Q020 ORDERING INFORMATION Package PowerPAK 1212-8W Lead (Pb)-free and Halogen-free SQ7414AENW-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 18 C a Continuous Drain Current I D T = 125 C 18 C a Continuous Source Current (Diode Conduction) I 18 A S b Pulsed Drain Current I 72 DM Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 16 mJ AS T = 25 C 62 C b Maximum Power Dissipation P W D T = 125 C 20 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 81 thJA C/W Junction-to-Case (Drain) R 2.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-0940-Rev. B, 04-May-15 Document Number: 62980 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mmSQ7414AENW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 20 - - A D(on) GS DS V = 10 V I = 8.7 A - 0.016 0.023 GS D V = 10 V I = 8.7 A, T = 125 C - - 0.039 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 8.7 A, T = 175 C - - 0.050 GS D J V = 4.5 V I = 8.7 A - 0.019 0.028 GS D b Forward Transconductance g V = 15 V, I = 8.7 A - 50 - S fs DS D b Dynamic Input Capacitance C - 1275 1590 iss Output Capacitance C -V = 0 V V = 30 V, f = 1 MHz112140 pF oss GS DS Reverse Transfer Capacitance C -4252 rss c Total Gate Charge Q -19 25 g c Gate-Source Charge Q -2V = 10 V V = 30 V, I = 8.7 A.6- nC gs GS DS D c Gate-Drain Charge Q -3.6- gd Gate Resistance R f = 1 MHz 0.6 1.12 1.6 g c Turn-On Delay Time t -8 10 d(on) c Rise Time t -13 16 r V = 30 V, R = 30 DD L ns c I 1 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g226 d(off) c Fall Time t -1518 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 72 A SM Forward Voltage V I = 8.7 A, V = 0 V - 0.8 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0940-Rev. B, 04-May-15 Document Number: 62980 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000