SQ4153EY www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -12 DS AEC-Q101 qualified R ( ) at V = -4.5 V 0.00832 DS(on) GS 100 % R and UIS tested g R ( ) at V = -2.5 V 0.01000 DS(on) GS Material categorization: R ( ) at V = -1.8 V 0.01430 DS(on) GS for definitions of compliance please see I (A) -25 www.vishay.com/doc 99912 D Configuration Single Package SO-8 S SO-8 Single D 5 D D 6 G D 7 8 4 G 33 D SS 22 SS 11 P-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS T = 25 C -25 C a Continuous Drain Current I D T = 125 C -14 C a Continuous Source Current (Diode Conduction) I -6.5 A S b Pulsed Drain Current I -100 DM Single Pulse Avalanche Current I -19 AS L = 0.1 mH Single Pulse Avalanche Energy E 18 mJ AS T = 25 C 7.1 C b Maximum Power Dissipation P W D T = 125 C 2.3 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 85 thJA C/W Junction-to-Foot (Drain) R 21 thJF Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-0100, Rev. B, 25-Jan-16 Document Number: 66897 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ4153EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -12 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 -0.6 -0.9 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = -12 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -12 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -12 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -4.5 V V -5 V -30 - - A D(on) GS DS V = -4.5 V I = -14 A - 0.00510 0.00832 GS D V = -4.5 V I = -14 A, T = 125 C - - 0.00900 GS D J a Drain-Source On-State Resistance R V = -4.5 V I = -14 A, T = 175 C - - 0.01100 DS(on) GS D J V = -2.5 V I = -13 A - 0.00650 0.01000 GS D V = -1.8 V I = -12 A - 0.00940 0.01430 GS D a Forward Transconductance g V = -6 V, I = -10.5 A - 54 - S fs DS D b Dynamic Input Capacitance C - 7500 11 000 iss Output Capacitance C -V = 0 V V = -6 V, f = 1 MHz28004200 pF oss GS DS Reverse Transfer Capacitance C -24003600 rss c Total Gate Charge Q - 101 151 g c Gate-Source Charge Q -1V = -4.5 V V = -6 V, I = -10.5 A5- nC gs GS DS D c Gate-Drain Charge Q -45- gd Gate Resistance R f = 1 MHz 1.1 2.2 3.2 g c Turn-On Delay Time t -31 42 d(on) c Rise Time t - 168 224 r V = -6 V, R = 15 DD L ns c I -10.5 A, V = -4.5 V, R = 6 D GEN g Turn-Off Delay Time t -310412 d(off) c Fall Time t -283376 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - -100 A SM Forward Voltage V I = -10.5 A, V = 0 - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0100, Rev. B, 25-Jan-16 Document Number: 66897 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000