X-On Electronics has gained recognition as a prominent supplier of SQ4431EY-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ4431EY-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ4431EY-T1_GE3 Vishay

SQ4431EY-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQ4431EY-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 10.8A 6W AEC-Q101 Qualified
Datasheet: SQ4431EY-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9608 ea
Line Total: USD 0.96 
Availability - 64746
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1317
10 : USD 0.9407
30 : USD 0.8368
100 : USD 0.7181
500 : USD 0.6662
1000 : USD 0.6419

64746
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9608
10 : USD 0.7724
100 : USD 0.5751
500 : USD 0.476
1000 : USD 0.4436
2500 : USD 0.4314
5000 : USD 0.4135
25000 : USD 0.4035

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Product
Series
Brand
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ4431EY-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ4431EY-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ4431EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) - 30 DS 100 % R and UIS Tested g R ( ) at V = - 10 V 0.030 DS(on) GS c AEC-Q101 Qualified R ( ) at V = - 4.5 V 0.052 DS(on) GS Material categorization: I (A) - 10.8 D For definitions of compliance please see Configuration Single www.vishay.com/doc 99912 S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 D Top View P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4431EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 10.8 C Continuous Drain Current I D T = 125 C - 6.2 C Continuous Source Current (Diode Conduction) I - 5.4 A S a Pulsed Drain Current I - 43.2 DM Single Pulse Avalanche Current I - 21 AS L = 0.1 mH Single Pulse Avalanche Energy E 22 mJ AS T = 25 C 6 C a Maximum Power Dissipation P W D T = 125 C 2 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 92 thJA C/W Junction-to-Foot (Drain) R 25 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). S13-1183-Rev. C, 20-May-13 Document Number: 65527 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ4431EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 30 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 30 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 30 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 40 - - A D(on) GS DS V = - 4.5 V I = - 5 A - 0.045 0.052 GS D V = - 10 V I = - 6 A - 0.022 0.030 GS D a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 6 A, T = 125 C - 0.027 0.032 GS D J V = - 10 V I = - 6 A, T = 175 C - 0.035 0.042 GS D J b Forward Transconductance g V = - 15 V, I = - 6 A - 25 - S fs DS D b Dynamic Input Capacitance C - 1010 1265 iss Output Capacitance C -V = 0 V V = - 15 V, f = 1 MHz243- pF oss GS DS Reverse Transfer Capacitance C -167- rss c Total Gate Charge Q -25 - g c Gate-Source Charge Q -4V = - 10 V V = - 15 V, I = - 7.2 A- nC gs GS DS D c Gate-Drain Charge Q -5- gd Gate Resistance R f = 1 MHz 1.5 3.36 5.5 g c Turn-On Delay Time t -10 - d(on) c Rise Time t -12 - r V = - 15 V, R = 15 DD L ns c I - 1 A, V = - 10 V, R = 6 D GEN g Turn-Off Delay Time t -33- d(off) c Fall Time t -15- f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 40 - A SM Forward Voltage V I = - 2.1 A, V = 0 - - 0.8 - 1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1183-Rev. C, 20-May-13 Document Number: 65527 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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