SQ4532AEY www.vishay.com Vishay Siliconix Automotive N-and P-Channel 30 V (D-S) 175 C MOSFET FEATURES SO-8 Dual D 2 TrenchFET power MOSFET D 5 2 c D 6 AEC-Q101 qualified 1 D 7 1 100 % R and UIS tested g 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 G 33 2 SS 22 22 GG 11 1 D S 1 2 S 1 Top View Marking Code: Q4532A G 2 PRODUCT SUMMARY G 1 N-CHANNEL P-CHANNEL V (V) 30 -30 DS R () at V = 10 V 0.031 0.070 DS(on) GS R () at V = 4.5 V 0.042 0.190 DS(on) GS S D 1 2 I (A) 7.3 -5.3 D N-Channel MOSFET P-Channel MOSFET Configuration N- and p-pair ORDERING INFORMATION Package SO-8 SQ4532AEY Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-source voltage V 30 -30 DS V Gate-source voltage V 20 GS T = 25 C 7.3 -5.3 C Continuous drain current I D T = 125 C 4.2 -3 C Continuous source current (diode conduction) I 4.2 -3 A S a Pulsed drain current I 29 -21 DM Single pulse avalanche current I 10 -9 AS L = 0.1 mH Single pulse avalanche energy E 54 mJ AS T = 25 C 3.3 3.3 C a Maximum power dissipation P W D T = 125 C 1.1 1.1 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNEL P-CHANNEL UNIT b Junction-to-ambient PCB mount R 110 105 thJA C/W Junction-to-foot (drain) R 45 45 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. When mounted on 1 square PCB (FR4 material) c. Parametric verification ongoing S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ4532AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0, I = 250 A N-Ch 30 - - GS D Drain-source breakdown voltage V DS V = 0, I = -250 A P-Ch -30 - - GS D V V = V , I = 250 A N-Ch 1.5 2 2.5 DS GS D Gate-source threshold voltage V GS(th) V = V , I = -250 A P-Ch -1.5 -2 -2.5 DS GS D N-Ch - - 100 Gate-source leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 30 V N-Ch - - 1 GS DS V = 0 V V = -30 V P-Ch - - -1 GS DS V = 0 V V = 30 V, T = 125 C N-Ch - - 50 GS DS J Zero gate voltage drain current I A DSS V = 0 V V = -30 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 30 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -30 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V = 5 V N-Ch 15 - - GS DS a On-state drain current I A D(on) V = -10 V V = -5 V P-Ch -15 - - GS DS V = 10 V I = 4.9 A N-Ch - 0.021 0.031 GS D V = -10 V I = -3.5 A P-Ch - 0.056 0.070 GS D V = 10 V I = 4.9 A, T = 125 C N-Ch - - 0.064 GS D J V = -10 V I = -3.5 A, T = 125 C P-Ch - - 0.100 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 4.9 A, T = 175 C N-Ch - - 0.082 GS D J V = -10 V I = -3.5 A, T = 175 C P-Ch - - 0.117 GS D J V = 4.5 V I = 4.1 A N-Ch - 0.033 0.042 GS D V = -4.5 V I = -2.5 A P-Ch - 0.157 0.190 GS D V = 15 V, I = 4.9 A N-Ch - 22 - DS D b Forward transconductance g S fs V = -15 V, I = -3.5 A P-Ch - 5.5 - DS D b Dynamic V = 0 V V = 15 V, f = 1 MHz N-Ch - 357 535 GS DS Input capacitance C iss V = 0 V V = -15 V, f = 1 MHz P-Ch - 352 528 GS DS V = 0 V V = 15 V, f = 1 MHz N-Ch - 82 123 GS DS Output capacitance C pF oss V = 0 V V = -15 V, f = 1 MHz P-Ch - 95 142 GS DS V = 0 V V = 15 V, f = 1 MHz N-Ch - 36 53 GS DS Reverse transfer capacitance C rss V = 0 V V = -15 V, f = 1 MHz P-Ch - 59 88 GS DS V = 10 V V = 15 V, I = 3.9 A N-Ch - 5.9 7.8 GS DS D Total gate charge Q g V = -10 V V = -15 V, I = -2.5 A P-Ch - 7.9 10.2 GS DS D V = 10 V V = 15 V, I = 3.9 A N-Ch - 1 - GS DS D nC Gate-source charge Q gs V = -10 V V = -15 V, I = -2.5 A P-Ch - 1.1 - GS DS D V = 10 V V = 15 V, I = 3.9 A N-Ch - 1.9 - GS DS D c Gate-drain charge Q gd V = -10 V V = -15 V, I = -2.5 A P-Ch - 2.7 - GS DS D N-Ch 1.7 3.4 5.1 Gate resistance R f = 1 MHz g P-Ch 2.8 5.8 8.6 S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000