SQ4940AEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES SO-8 Dual D 2 TrenchFET power MOSFET D 5 2 100 % R and UIS tested D 6 g 1 D 7 1 d AEC-Q101 qualified 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 G 33 2 D D 1 2 SS 22 22 GG 11 1 S 1 Top View G G 1 2 PRODUCT SUMMARY V (V) 40 DS R () at V = 10 V 0.024 DS(on) GS S S 1 2 R () at V = 4.5 V 0.029 DS(on) GS N-Channel MOSFET I (A) 8 N-Channel MOSFET D Configuration Dual ORDERING INFORMATION Package SO-8 SQ4940AEY Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS T = 25 C C 8 a Continuous drain current I D T = 125 C 5.3 C A Continuous source current (diode conduction) I 3.6 S Pulsed drain current b I 32 DM Single pulse avalanche current I 17 AS L = 0.1 mH Single pulse avalanche energy E 15 mJ AS T = 25 C 4 C b Maximum power dissipation P W D T = 125 C 1.3 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 112 thJA C/W Junction-to-foot (drain) R 38 thJF Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR-4 material) d. Parametric verification ongoing S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ4940AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 40 V, T = 55 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 5.3 A - 0.020 0.024 GS D V = 10 V I = 5.3 A, T = 125 C - - 0.036 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 5.3 A, T = 175 C - - 0.043 GS D J V = 4.5 V I = 4.9 A - 0.024 0.029 GS D b Forward transconductance g V = 15 V, I = 5.3 A - 33 - S fs DS D b Dynamic Input capacitance C - 593 741 iss Output capacitance C -V = 0 V V = 20 V, f = 1 MHz103129 pF oss GS DS Reverse transfer capacitance C -4455 rss c Total gate charge Q -28.4 43 g c Gate-source charge Q -4V = 10 V V = 20 V, I = 5.7 A- nC gs GS DS D c Gate-drain charge Q -6- gd Gate resistance R f = 1 MHz 0.5 - 2 g c Turn-on delay time t -8 12 d(on) c Rise time t -13 20 r V = 20 V, R = 3.5 DD L ns c I 5.7 A, V = 10 V, R = 1 Turn-off delay time t -2D GEN g030 d(off) c Fall time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 32 A SM Forward voltage V I = 3.6 A, V = 0 V - 0.75 1.1 V SD F GS Notes e. a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000