SQ9407EY www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES SO-8 Single D TrenchFET power MOSFET D 5 d 6 AEC-Q101 qualified D 7 D 100 % R and UIS tested g 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 33 G 22 SS 11 SS S S Top View G PRODUCT SUMMARY V (V) -60 DS R () at V = -10 V 0.085 DS(on) GS D R () at V = -4.5 V 0.115 DS(on) GS P-Channel MOSFET I (A) -4.6 D Configuration Single ORDERING INFORMATION Package SO-8 SQ9407EY Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS = 25 C -4.6 T C Continuous drain current I D T = 125 C -2.6 C Continuous source current (diode conduction) I -3.4 A S a Pulsed drain current I -18.5 DM Single pulse avalanche current I -20 AS L = 0.1 mH Single pulse avalanche energy E 20 mJ AS T = 25 C 3.75 C a Maximum power dissipation P W D T = 125 C 1.25 C Operating junction and storage temperature range T , T -55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-ambient PCB mount R 100 thJA C/W Junction-to-case (drain) R 40 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. When mounted on 1 square PCB (FR-4 material) c. Parametric verification ongoing S21-0849-Rev. B, 16-Aug-2021 Document Number: 67582 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ9407EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V V V = V , I = -250 A -1.5 -2.0 -2.5 Gate-source threshold voltage GS(th) DS GS D I V = 0 V, V = 20 V - - 100 nA Gate-source leakage GSS DS GS V = 0 V V = -60 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C - - -150 GS DS J a On-state drain current I V = -10 V V -5 V -12 - - A D(on) GS DS V = -4.5 V I = -2.5 A - 0.087 0.115 GS D V = -10 V I = -3.5 A - 0.067 0.085 GS D a Drain-source on-state resistance R DS(on) V = -10 V I = -3.5 A, T = 125 C - - 0.143 GS D J V = -10 V I = -3.5 A, T = 175 C - - 0.176 GS D J b Forward transconductance g V = -15 V, I = -3.5 A - 10 - S fs DS D b Dynamic Input capacitance C - 912 1140 iss C -V = 0 V V = -30 V, f = 1 MHz100125 pF Output capacitance oss GS DS Reverse transfer capacitance C -6075 rss c Total gate charge Q -26.5 40 g c Q -3V = -10 V V = -30 V, I = -4.3 A.8- nC Gate-source charge gs GS DS D c Gate-drain charge Q -5.8- gd R f = 1 MHz 3.5 7.1 10.7 Gate resistance g c Turn-on delay time t -11 17 d(on) c Rise time t -13 20 r V = -30 V, R = 8.8 DD L ns c I -3.4 A, V = -10 V, R = 1 D GEN g t -3654 Turn-off delay time d(off) c Fall time t -812 f b Source-Drain Diode Ratings and Characteristics a I - - -18.5 A Pulsed current SM Forward voltage V I = -3 A, V = 0 V - -0.84 -1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0849-Rev. B, 16-Aug-2021 Document Number: 67582 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000