X-On Electronics has gained recognition as a prominent supplier of SQ4961EY-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ4961EY-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ4961EY-T1_GE3 Vishay

SQ4961EY-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQ4961EY-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual P-Channel 60V AEC-Q101 Qualified
Datasheet: SQ4961EY-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3041 ea
Line Total: USD 1.3 
Availability - 35918
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
143
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3316
10 : USD 1.1867
30 : USD 1.1068
100 : USD 1.0171
500 : USD 0.8897
1000 : USD 0.8721

35918
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3041
10 : USD 1.0511
100 : USD 0.8449
500 : USD 0.7178
1000 : USD 0.6888
2500 : USD 0.6888
5000 : USD 0.6822
10000 : USD 0.6632
25000 : USD 0.6554

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ4961EY-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ4961EY-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ4961EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) - 60 DS AEC-Q101 Qualified R ( ) at V = - 10 V 0.085 DS(on) GS 100 % R and UIS Tested g R ( ) at V = - 4.5 V 0.115 DS(on) GS Material categorization: I (A) per leg - 4.4 D For definitions of compliance please see Configuration Dual www.vishay.com/doc 99912 S S SO-8 1 2 S D 1 1 8 1 G D G G 2 7 1 2 1 1 S D 2 3 6 2 G D 2 4 5 2 Top View D D 1 2 P-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4961EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.4 C Continuous Drain Current I D T = 125 C - 2.5 C Continuous Source Current (Diode Conduction) I - 3 A S a Pulsed Drain Current I - 18 DM Single Pulse Avalanche Current I - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 3.3 C a Maximum Power Dissipation P W D T = 125 C 1.1 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 105 thJA C/W Junction-to-Foot (Drain) R 45 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). S12-2907-Rev. B, 10-Dec-12 Document Number: 67539 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ4961EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 60 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 60 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 60 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 12 - - A D(on) GS DS V = - 10 V I = - 3.5 A - 0.070 0.085 GS D V = - 10 V I = - 3.5 A, T = 125 C - - 0.142 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 3.5 A, T = 175 C - - 0.176 GS D J V = - 4.5 V I = - 2.5 A - 0.095 0.115 GS D b Forward Transconductance g V = - 15 V, I = - 3.5 A - 9 - S fs DS D b Dynamic Input Capacitance C - 912 1140 iss Output Capacitance C -V = 0 V V = - 30 V, f = 1 MHz100125 pF oss GS DS Reverse Transfer Capacitance C -6075 rss c Total Gate Charge Q - 26.5 40 g c Gate-Source Charge Q -3V = - 10 V V = - 30 V, I = - 4.3 A.8- nC gs GS DS D c Gate-Drain Charge Q -5.8- gd Gate Resistance R f = 1 MHz 3 - 16 g c Turn-On Delay Time t -11 17 d(on) c Rise Time t -13 20 r V = - 30 V, R = 8.8 DD L ns c I - 3.4 A, V = - 10 V, R = 1 Turn-Off Delay Time t -3D GEN g654 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- - 18 A SM Forward Voltage V I = - 3 A, V = 0 V - - 0.84 - 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2907-Rev. B, 10-Dec-12 Document Number: 67539 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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