SQD07N25-350H www.vishay.com Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 250 DS Package with low thermal resistance R () at V = 10 V 0.350 DS(on) GS d I (A) 7 AEC-Q101 qualified D Configuration Single 100 % R and UIS tested g Package TO-252 Material categorization: for definitions of compliance please see D www.vishay.com/doc 99912 TO-252TO Drain connected to tab G S S N-Channel MOSFET D G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 30 GS T = 25 C 7 C Continuous Drain Current I D T = 125 C 4 C a Continuous Source Current (Diode Conduction) I 50 A S b Pulsed Drain Current I 15 DM Single Pulse Avalanche Current I 7 AS L = 0.1 mH Single Pulse Avalanche Energy E 2.4 mJ AS T = 25 C 71 C b Maximum Power Dissipation P W D T = 125 C 23 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 2.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. C, 10-Aug-15 Document Number: 67088 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD07N25-350H www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 30 V - - 100 nA GSS DS GS V = 0 V V = 250 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 250 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 250 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 10 - - A D(on) GS DS V = 10 V I = 10 A - 0.290 0.350 GS D a Drain-Source On-State Resistance R V = 10 V I = 10 A, T = 125 C - - 0.858 DS(on) GS D J V = 10 V I = 10 A, T = 175 C - - 1.250 GS D J b Forward Transconductance g V = 15 V, I = 10 A - 20 - S fs DS D b Dynamic Input Capacitance C - 964 1205 iss Output Capacitance C -8V = 0 V V = 25 V, f = 1 MHz8110 pF oss GS DS Reverse Transfer Capacitance C -3240 rss c Total Gate Charge Q -19 29 g c Gate-Source Charge Q -6V = 10 V V = 125 V, I = 10 A.5- nC gs GS DS D c Gate-Drain Charge Q -5- gd Gate Resistance R f = 1 MHz 0.35 1 3 g c Turn-On Delay Time t -9 14 d(on) c Rise Time t -8 12 r V = 125 V, R = 12.5 DD L ns c I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g523 d(off) c Fall Time t -46 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 15 A SM Forward Voltage V I = 20 A, V = 0 V - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. C, 10-Aug-15 Document Number: 67088 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000