SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES d PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS 100 % R and UIS tested g R () at V = 10 V 0.042 DS(on) GS AEC-Q101 qualified R () at V = 4.5 V 0.060 DS(on) GS I (A) 15 Package with low thermal resistance D Configuration Single Material categorization: Package TO-252 for definitions of compliance please see www.vishay.com/doc 99912 D TO-252TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS a T = 25 C 15 C Continuous Drain Current I D T = 125 C 10 C a Continuous Source Current (Diode Conduction) I 15 A S b Pulsed Drain Current I 50 DM Single Pulse Avalanche Current I 18 AS L = 0.1 mH Single Pulse Avalanche Energy E 16.2 mJ AS T = 25 C 37 C b Maximum Power Dissipation P W D T = 125 C 11 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD15N06-42L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 10 A - 0.036 0.042 GS D V = 10 V I = 10 A, T = 125 C - - 0.075 GS D J V = 10 V I = 10 A, T = 175 C - - 0.090 GS D J a Drain-Source On-State Resistance R DS(on) V = 4.5 V I = 10 A, T = 125 C - 0.092 - GS D J V = 4.5 V I = 10 A, T = 175 C - 0.110 - GS D J V = 4.5 V I = 10 A - 0.048 0.060 GS D b Forward Transconductance g V = 15 V, I = 6 A - 11 - S fs DS D b Dynamic Input Capacitance C - 425 535 iss Output Capacitance C -9V = 0 V V = 25 V, f = 1 MHz5120 pF oss GS DS Reverse Transfer Capacitance C -4050 rss c Total Gate Charge Q -9.5 15 g c Gate-Source Charge Q -1V = 10 V V = 30 V, I = 15 A.7- nC gs GS DS D c Gate-Drain Charge Q -2.5- gd Gate Resistance R f = 1 MHz 1.2 2.5 5.4 g c Turn-On Delay Time t -5 8 d(on) c Rise Time t -10 15 r V = 30 V, R = 2 DD L ns c I 15 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g320 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 50 A SM Forward Voltage V I = 10 A, V = 0 V - 0.9 1.2 V SD F GS Reverse Recovery Time t I = 15 A, dI/dt = 100 A/s - 29 60 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000