X-On Electronics has gained recognition as a prominent supplier of SQD15N06-42L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD15N06-42L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQD15N06-42L_GE3 Vishay

SQD15N06-42L_GE3 electronic component of Vishay
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Part No.SQD15N06-42L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 15A 37W AEC-Q101 Qualified
Datasheet: SQD15N06-42L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8272 ea
Line Total: USD 0.83 
Availability - 2004
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1531
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1114
10 : USD 0.9407
30 : USD 0.8458
100 : USD 0.7416
500 : USD 0.6942
1000 : USD 0.6715

2004
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8272
10 : USD 0.7843
100 : USD 0.6358
500 : USD 0.5137
1000 : USD 0.4741
2000 : USD 0.473
4000 : USD 0.4213
10000 : USD 0.4081

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SQD15N06-42L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD15N06-42L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES d PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS 100 % R and UIS tested g R () at V = 10 V 0.042 DS(on) GS AEC-Q101 qualified R () at V = 4.5 V 0.060 DS(on) GS I (A) 15 Package with low thermal resistance D Configuration Single Material categorization: Package TO-252 for definitions of compliance please see www.vishay.com/doc 99912 D TO-252TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS a T = 25 C 15 C Continuous Drain Current I D T = 125 C 10 C a Continuous Source Current (Diode Conduction) I 15 A S b Pulsed Drain Current I 50 DM Single Pulse Avalanche Current I 18 AS L = 0.1 mH Single Pulse Avalanche Energy E 16.2 mJ AS T = 25 C 37 C b Maximum Power Dissipation P W D T = 125 C 11 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD15N06-42L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 10 A - 0.036 0.042 GS D V = 10 V I = 10 A, T = 125 C - - 0.075 GS D J V = 10 V I = 10 A, T = 175 C - - 0.090 GS D J a Drain-Source On-State Resistance R DS(on) V = 4.5 V I = 10 A, T = 125 C - 0.092 - GS D J V = 4.5 V I = 10 A, T = 175 C - 0.110 - GS D J V = 4.5 V I = 10 A - 0.048 0.060 GS D b Forward Transconductance g V = 15 V, I = 6 A - 11 - S fs DS D b Dynamic Input Capacitance C - 425 535 iss Output Capacitance C -9V = 0 V V = 25 V, f = 1 MHz5120 pF oss GS DS Reverse Transfer Capacitance C -4050 rss c Total Gate Charge Q -9.5 15 g c Gate-Source Charge Q -1V = 10 V V = 30 V, I = 15 A.7- nC gs GS DS D c Gate-Drain Charge Q -2.5- gd Gate Resistance R f = 1 MHz 1.2 2.5 5.4 g c Turn-On Delay Time t -5 8 d(on) c Rise Time t -10 15 r V = 30 V, R = 2 DD L ns c I 15 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g320 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 50 A SM Forward Voltage V I = 10 A, V = 0 V - 0.9 1.2 V SD F GS Reverse Recovery Time t I = 15 A, dI/dt = 100 A/s - 29 60 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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