X-On Electronics has gained recognition as a prominent supplier of SQD50P06-15L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD50P06-15L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQD50P06-15L_GE3 Vishay

Hot SQD50P06-15L_GE3 electronic component of Vishay
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Part No.SQD50P06-15L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 50A 136W AEC-Q101 Qualified
Datasheet: SQD50P06-15L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3323 ea
Line Total: USD 1.33 
Availability - 734
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
184
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4184
10 : USD 1.187
30 : USD 1.059
100 : USD 0.9138
500 : USD 0.8507
1000 : USD 0.822

734
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3323
10 : USD 1.1142
30 : USD 0.9953
100 : USD 0.8596
500 : USD 0.7983
1000 : USD 0.7715

11062
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.151
10 : USD 2.2655
100 : USD 1.7135
500 : USD 1.564
1000 : USD 1.5065
2000 : USD 1.495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Factory Pack Quantity :
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We are delighted to provide the SQD50P06-15L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD50P06-15L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) - 60 DS Package with Low Thermal Resistance R ( ) at V = - 10 V 0.0155 DS(on) GS 100 % R and UIS Tested g R ( ) at V = - 4.5 V 0.0200 DS(on) GS AEC-Q101 Qualified I (A) - 50 D Material categorization: Configuration Single For definitions of compliance please see www.vishay.com/doc 99912 S TO-252 G Drain Connected to Tab GD S D Top View P-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50P06-15L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 50 C a Continuous Drain Current I D T = 125 C - 38 C a Continuous Source Current (Diode Conduction) I - 50 A S b Pulsed Drain Current I - 200 DM Single Pulse Avalanche Current I - 52 AS L = 0.1 mH Single Pulse Avalanche Energy E 135 mJ AS T = 25 C 136 C b Maximum Power Dissipation P W D T = 125 C 45 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). S12-2006-Rev. E, 20-Aug-12 Document Number: 69098 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQD50P06-15L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 60 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 60 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 60 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 50 - - A D(on) GS DS V = - 10 V I = - 17 A - 0.0135 0.0155 GS D V = - 10 V I = - 50 A, T = 125 C - - 0.026 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 50 A, T = 175 C - - 0.032 GS D J V = - 4.5 V I = - 14 A - 0.017 0.020 GS D a Forward Transconductance g V = - 15 V, I = - 17 A - 50 - S fs DS D b Dynamic Input Capacitance C - 4730 5910 iss Output Capacitance C -V = 0 V V = - 25 V, f = 1 MHz485606 pF oss GS DS Reverse Transfer Capacitance C -330410 rss c Total Gate Charge Q - 98 150 g c Gate-Source Charge Q -1V = - 10 V V = - 30 V, I = - 50 A523 nC gs GS DS D c Gate-Drain Charge Q -2132 gd Gate Resistance R f = 1 MHz 1.47 2.9 4.42 g c Turn-On Delay Time t -15 18 d(on) c Rise Time t -12 16 r V = - 30 V, R = 0.6 DD L ns c I - 50 A, V = - 10 V, R = 6.0 D GEN g Turn-Off Delay Time t -112125 d(off) c Fall Time t -3948 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 200 A SM Forward Voltage V I = - 50 A, V = 0 V - - 0.8 - 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2006-Rev. E, 20-Aug-12 Document Number: 69098 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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