X-On Electronics has gained recognition as a prominent supplier of SQD100N04-3m6L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD100N04-3m6L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQD100N04-3m6L_GE3 Vishay

SQD100N04-3m6L_GE3 electronic component of Vishay
SQD100N04-3m6L_GE3 Vishay
SQD100N04-3m6L_GE3 MOSFETs
SQD100N04-3m6L_GE3  Semiconductors

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See Product Specifications
Part No. SQD100N04-3m6L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Channel 40V AEC-Q101 Qualified
Datasheet: SQD100N04-3m6L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5364 ea
Line Total: USD 2.54 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 2.5364
10 : USD 1.6574
100 : USD 1.1736
500 : USD 1.0828
1000 : USD 1.0294
5000 : USD 0.976

0
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 3.4702
10 : USD 1.2796
100 : USD 1.0503
500 : USD 0.9311
1000 : USD 0.7935
2000 : USD 0.7935
4000 : USD 0.7542
24000 : USD 0.7309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SQD100N04-3m6L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD100N04-3m6L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 40 DS Package with low thermal resistance R () at V = 10 V 0.0036 DS(on) GS 100 % R and UIS tested g R () at V = 4.5 V 0.0042 DS(on) GS d I (A) 100 AEC-Q101 qualified D Configuration Single Material categorization: Package TO-252 for definitions of compliance please see www.vishay.com/doc 99912 D TOTO-252 Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C Continuous Drain Current I D T = 125 C 80 C a Continuous Source Current (Diode Conduction) I 100 A S b Pulsed Drain Current I 400 DM Single Pulse Avalanche Current I 55 AS L = 0.1 mH Single Pulse Avalanche Energy E 151 mJ AS T = 25 C 136 C b Maximum Power Dissipation P W D T = 125 C 45 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. B, 10-Aug-15 Document Number: 63837 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD100N04-3m6L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 20 A - 0.0030 0.0036 GS D V = 10 V I = 20 A, T = 125 C - - 0.0058 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 20 A, T = 175 C - - 0.0070 GS D J V = 4.5 V I = 20 A - 0.0035 0.0042 GS D b Forward Transconductance g V = 15 V, I = 15 A - 105 - S fs DS D b Dynamic Input Capacitance C - 4880 5860 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz560670 pF oss GS DS Reverse Transfer Capacitance C -250300 rss c Total Gate Charge Q -85 130 g c Gate-Source Charge Q -1V = 10 V V = 20 V, I = 50 A4- nC gs GS DS D c Gate-Drain Charge Q -14- gd Gate Resistance R f = 1 MHz 0.6 1.5 3 g c Turn-On Delay Time t -9 11 d(on) c Rise Time t -11 14 r V = 20 V, R = 0.4 DD L ns c I 50 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g947 d(off) c Fall Time t -1114 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 400 A SM Forward Voltage V I = 30 A, V = 0 V - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. B, 10-Aug-15 Document Number: 63837 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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