SQD100N02-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 20 DS 100 % R and UIS tested g R ( ) at V = 10 V 0.0035 DS(on) GS d AEC-Q101 qualified R ( ) at V = 4.5 V 0.0045 DS(on) GS I (A) 100 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package TO-252 TO-252TO D Drain connected to tab G S N-Channel MOSFET D S G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C Continuous Drain Current I D T = 125 C 65 C Continuous Source Current (Diode Conduction) I 75 A S b Pulsed Drain Current I 300 DM Single Pulse Avalanche Current I 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 83 C b Maximum Power Dissipation P W D = 125 C 27 T C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD100N02-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 20 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 20 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 20 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 30 A - 0.0020 0.0035 GS D V = 10 V I = 30 A, T = 125 C - - 0.0050 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0058 GS D J V = 4.5 V I = 20 A - 0.0030 0.0045 GS D b Forward Transconductance g V = 15 V, I = 30 A - 186 - S fs DS D b Dynamic Input Capacitance C - 4300 5500 iss Output Capacitance C -V = 0 V V = 10 V, f = 1 MHz13501700 pF oss GS DS Reverse Transfer Capacitance C -585800 rss c Total Gate Charge Q -70 110 g c Gate-Source Charge Q -2V = 10 V V = 10 V, I = 50 A1- nC gs GS DS D c Gate-Drain Charge Q -11- gd Gate Resistance R f = 1 MHz 1.1 2.3 3.5 g c Turn-On Delay Time t -15 25 d(on) c Rise Time t -5 10 V = 10 V, R = 0.2 r DD L ns c I 50 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g860 d(off) c Fall Time t -1525 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 300 A SM Forward Voltage V I = 50 A, V = 0 V - 0.86 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000