SQ4850EY www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS 100 % R and UIS tested g R () at V = 10 V 0.022 DS(on) GS AEC-Q101 qualified R () at V = 4.5 V 0.031 DS(on) GS I (A) 12 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package SO-8 SO-8 Single D D 5 D 6 D D 7 8 G 4 S G 33 22 SS N-Channel MOSFET 11 SS S Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 12 C Continuous Drain Current I D T = 125 C 6.9 C Continuous Source Current (Diode Conduction) I 6.2 A S a Pulsed Drain Current I 48 DM Single Pulse Avalanche Current I 23 AS L = 0.1 mH Single Pulse Avalanche Energy E 26 mJ AS T = 25 C 6.8 C a Maximum Power Dissipation P W D T = 125 C 2.2 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT b Junction-to-Ambient PCB Mount R 85 thJA C/W Junction-to-Foot (Drain) R 22 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). S15-1878-Rev. F, 17-Aug-15 Document Number: 68878 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ4850EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 6 A - 0.017 0.022 GS D V = 10 V I = 6 A, T = 125 C - 0.029 0.037 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 6 A, T = 175 C - 0.037 0.047 GS D J V = 4.5 V I = 5 A - 0.025 0.031 GS D b Forward Transconductance g V = 15 V, I = 6 A - 21 - S fs DS D b Dynamic Input Capacitance C - 1000 1250 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz185235 pF oss GS DS Reverse Transfer Capacitance C -7595 rss c Total Gate Charge Q -20 30 g c Gate-Source Charge Q -2V = 10 V V = 30 V, I = 6 A.9- nC gs GS DS D c Gate-Drain Charge Q -4.4- gd Gate Resistance R f = 1 MHz 0.3 - 2.1 g c Turn-On Delay Time t -7 11 d(on) c Rise Time t -9 14 r V = 30 V, R = 30 DD L ns c I 1 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g335 d(off) c Fall Time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 48 A SM Forward Voltage V I = 1.7 A, V = 0 - 0.8 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1878-Rev. F, 17-Aug-15 Document Number: 68878 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000