SQ4435EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 30 DS Definition R ( ) at V = - 10 V 0.018 DS(on) GS TrenchFET Power MOSFET R ( ) at V = - 4.5 V 0.031 DS(on) GS c AEC-Q101 Qualified I (A) - 15 D 100 % R and UIS Tested g Configuration Single Compliant to RoHS Directive 2002/95/EC S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 D Top View P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4435EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 15 C I Continuous Drain Current D T = 125 C - 8.7 C I Continuous Source Current (Diode Conduction) - 6.2 A S a I - 60 Pulsed Drain Current DM Single Pulse Avalanche Current I - 25 AS L = 0.1 mH E Single Pulse Avalanche Energy 31 mJ AS T = 25 C 6.8 C a P Maximum Power Dissipation W D T = 125 C 2.3 C T , T Operating Junction and Storage Temperature Range - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient R 85 PCB Mount thJA C/W R Junction-to-Foot (Drain) 22 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). c. Parametric verification ongoing. S11-2109 Rev. B, 31-Oct-11 Document Number: 67932 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ4435EY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 30 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 30 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 30 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 30 - - A D(on) GS DS V = - 10 V I = - 8 A - 0.013 0.018 GS D V = - 10 V I = - 8 A, T = 125 C - - 0.026 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 8 A, T = 175 C - - 0.030 GS D J V = - 4.5 V I = - 6 A - 0.023 0.031 GS D b Forward Transconductance g V = - 15 V, I = - 8 A - 22 - S fs DS D b Dynamic Input Capacitance C - 1736 2170 iss Output Capacitance C -V = 0 V V = - 15 V, f = 1 MHz392490 pF oss GS DS Reverse Transfer Capacitance C -268335 rss c Total Gate Charge Q - 38.3 58 g c Gate-Source Charge Q -5V = - 10 V V = - 15 V, I = - 4.6 A.9- nC gs GS DS D c Gate-Drain Charge Q -9- gd Gate Resistance R f = 1 MHz 2 - 7 g c Turn-On Delay Time t - 12.5 19 d(on) c Rise Time t -9 15 r V = - 15 V, R = 15 DD L ns c I - 1 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -45.368 d(off) c Fall Time t -1015 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- - 60 A SM Forward Voltage V I = - 8 A, V = 0 - - 0.84 - 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2109 Rev. B, 31-Oct-11 Document Number: 67932 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000