SQ4401DY
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 150 C MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
V (V) - 40
DS
Definition
R ( ) at V = - 10 V 0.014
DS(on) GS
TrenchFET Power MOSFET
R ( ) at V = - 4.5 V 0.023
DS(on) GS
AEC-Q101 Qualified
I (A) - 15.8
D
100 % R and UIS Tested
g
Configuration Single
Compliant to RoHS Directive 2002/95/EC
S
SO-8
S
1 8
D
G
S D
2 7
S
3 6
D
G D
4 5
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4401DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V - 40
DS
V
Gate-Source Voltage V 20
GS
T = 25 C - 15.8
C
a
Continuous Drain Current I
D
T = 125 C - 7.1
C
a
Continuous Source Current (Diode Conduction) I - 6.5 A
S
b
Pulsed Drain Current I - 63
DM
Single Pulse Avalanche Current I - 30
AS
L = 0.1 mH
Single Pulse Avalanche Energy E 45 mJ
AS
T = 25 C 6
C
b
Maximum Power Dissipation P W
D
T = 125 C 1.2
C
Operating Junction and Storage Temperature Range T , T - 55 to + 150 C
J stg
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLLIMITUNIT
c
Junction-to-Ambient PCB Mount R 85
thJA
C/W
Junction-to-Foot (Drain) R 21
thJF
Notes
a. Package limited.
b. Pulse test; pulse width 300 s, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
S11-2109 Rev. D, 31-Oct-11 Document Number: 68908
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4401DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 40 - -
DS GS D
V
Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - - 2.5
GS(th) DS GS D
Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 0 V V = - 40 V - - - 1.0
GS DS
Zero Gate Voltage Drain Current I V = 0 V V = - 40 V, T = 125 C - - - 50 A
DSS GS DS J
V = 0 V V = - 40 V, T = 150 C - - - 120
GS DS J
a
On-State Drain Current I V = - 10 V V - 5 V - 30 - - A
D(on) GS DS
V = - 10 V I = - 10.5 A - 0.011 0.014
GS D
V = - 10 V I = - 30 A, T = 125 C - 0.017 0.020
GS D J
a
Drain-Source On-State Resistance R
DS(on)
V = - 10 V I = - 30 A, T = 150 C - 0.019 0.022
GS D J
V = - 4.5 V I = - 30 A - 0.017 0.023
GS D
b
Forward Transconductance g V = - 15 V, I = - 10.5 A - 30 - S
fs DS D
b
Dynamic
Input Capacitance C - 3400 4250
iss
Output Capacitance C -V = 0 V V = - 20 V, f = 1 MHz440550 pF
oss GS DS
Reverse Transfer Capacitance C -350436
rss
c
Total Gate Charge Q - 74 115
g
c
Gate-Source Charge Q -1V = - 10 V V = - 20 V, I = - 10.5 A1- nC
gs GS DS D
c
Gate-Drain Charge Q -16-
gd
Gate Resistance R f = 1 MHz 1.16 - 3.21
g
c
Turn-On Delay Time t -58 85
d(on)
c
Rise Time t - 76 105
r
V = - 15 V, R = 15
DD L
ns
c I - 1 A, V = - 10 V, R = 6
D GEN g
Turn-Off Delay Time t -6785
d(off)
c
Fall Time t -4455
f
b
Source-Drain Diode Ratings and Characteristics
a
Pulsed Current I -- - 63 A
SM
Forward Voltage V I = - 2.7 A, V = 0 - - 0.8 - 1.1 V
SD F GS
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2109 Rev. D, 31-Oct-11 Document Number: 68908
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000