X-On Electronics has gained recognition as a prominent supplier of SQ3987EV-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ3987EV-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ3987EV-T1_GE3 Vishay

SQ3987EV-T1_GE3 electronic component of Vishay
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Part No.SQ3987EV-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual P-Ch -30V AEC-Q101 Qualified
Datasheet: SQ3987EV-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6138 ea
Line Total: USD 0.61 
Availability - 54008
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2832
5000 : USD 0.2545
10000 : USD 0.2519
20000 : USD 0.2495
30000 : USD 0.247
50000 : USD 0.2468

1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9052
10 : USD 0.6677
30 : USD 0.5659

54008
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6138
10 : USD 0.4191
100 : USD 0.3113
500 : USD 0.2717
1000 : USD 0.2519
3000 : USD 0.2343
6000 : USD 0.2266
9000 : USD 0.2211
24000 : USD 0.2178

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ3987EV-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ3987EV-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ3987EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES TSOP-6 Dual D 2 TrenchFET power MOSFET 4 S 1 AEC-Q101 qualified 5 D 1 100 % R and UIS tested g 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 2 S 2 S 1 S 2 1 G 1 Top View Marking code: 8X G G 2 PRODUCT SUMMARY 1 V (V) -30 DS R ( ) at V = -10 V -0.110 DS(on) GS R ( ) at V = -4.5 V -0.185 DS(on) GS I (A) -2.75 D Configuration Dual D D 2 1 Package TSOP-6 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 20 GS T = 25 C -3 C a Continuous drain current (T = 150 C) I J D T = 125 C -1.74 C A Pulsed drain current I -11 DM a Continuous source current (diode conduction) I -2.1 S T = 25 C 1.67 C a Maximum power dissipation P W D T = 125 C 0.56 C Unclamped inductive surge UIS I -5 A AV Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT a Maximum junction-to-ambient Steady state R 150 thJA C/W Maximum junction-to-foot (drain) Steady state R 90 thJF Note a. Surface mounted on 1 x 1 FR4 board S19-0398-Rev. B, 06-May-2019 Document Number: 75315 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ3987EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate threshold voltage V V = V , I = -250 A -1.5 - -2.5 V GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -30 V - - -1 GS DS Zero gate voltage drain I A DSS current V = 0 V V = -30 V, T = 175 C - - -50 GS DS J a On-state drain current I V = -10 V V -5 V -4 - - A D(on) GS DS V = -10 V I = -1.5 A - 0.085 0.133 Drain-source on-state GS D R DS(on) a resistance V = -4.5 V I = -2 A - 0.135 0.185 GS D a Forward transconductance g V = -5 V, I = -1 A - 4.2 - S fs DS D a Diode forward voltage V I = -0.5 A, V = 0 V - -0.83 -1.10 V SD S GS b Dynamic Input capacitance C - 456 570 iss Output capacitance C V = 0 V V = -15 V - 85 106 pF oss GS DS Reverse capacitance C -59 74 rss Total gate charge Q - 9.7 12.2 g Gate-source charge Q V = -10 V V = -15 V, I = -3 A -1.3 - nC gs GS DS D Gate-drain charge Q -2 - gd Gate resistance R f = 1 MHz 9 - 24 g Turn-on delay time t -6.6 8.3 d(on) Rise time t -2.4 3 r V = -10 V, R = 10 DD L ns I -1 A, V = -10 V, R = 1 Turn-off delay time t D GEN g - 18.4 23 d(off) Fall time t -2.2 2.8 f b Source-Drain Diode Ratings and Characteristic Pulsed current I -- -11 A SM Forward voltage V I = 0.5 A, V = 0 V - -0.83 -1.1 V SD F GS Reverse recovery fall time t -9.1 - ns a Reverse recovery rise time t -4.8 - ns b V = -24 V, I = -1.5 A, di/dt = 100 A/s, Body diode reverse recovery DD FM t -14 28 ns rr R = 160 , L = 1 mH, pulse W = 2 s time Body diode reverse recovery Q - 9 18 C rr charge Body diode peak reverse I --1.4 - A RM(REC) recovery current Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0398-Rev. B, 06-May-2019 Document Number: 75315 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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