SQ3987EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES TSOP-6 Dual D 2 TrenchFET power MOSFET 4 S 1 AEC-Q101 qualified 5 D 1 100 % R and UIS tested g 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 2 S 2 S 1 S 2 1 G 1 Top View Marking code: 8X G G 2 PRODUCT SUMMARY 1 V (V) -30 DS R ( ) at V = -10 V -0.110 DS(on) GS R ( ) at V = -4.5 V -0.185 DS(on) GS I (A) -2.75 D Configuration Dual D D 2 1 Package TSOP-6 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 20 GS T = 25 C -3 C a Continuous drain current (T = 150 C) I J D T = 125 C -1.74 C A Pulsed drain current I -11 DM a Continuous source current (diode conduction) I -2.1 S T = 25 C 1.67 C a Maximum power dissipation P W D T = 125 C 0.56 C Unclamped inductive surge UIS I -5 A AV Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT a Maximum junction-to-ambient Steady state R 150 thJA C/W Maximum junction-to-foot (drain) Steady state R 90 thJF Note a. Surface mounted on 1 x 1 FR4 board S19-0398-Rev. B, 06-May-2019 Document Number: 75315 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ3987EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate threshold voltage V V = V , I = -250 A -1.5 - -2.5 V GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -30 V - - -1 GS DS Zero gate voltage drain I A DSS current V = 0 V V = -30 V, T = 175 C - - -50 GS DS J a On-state drain current I V = -10 V V -5 V -4 - - A D(on) GS DS V = -10 V I = -1.5 A - 0.085 0.133 Drain-source on-state GS D R DS(on) a resistance V = -4.5 V I = -2 A - 0.135 0.185 GS D a Forward transconductance g V = -5 V, I = -1 A - 4.2 - S fs DS D a Diode forward voltage V I = -0.5 A, V = 0 V - -0.83 -1.10 V SD S GS b Dynamic Input capacitance C - 456 570 iss Output capacitance C V = 0 V V = -15 V - 85 106 pF oss GS DS Reverse capacitance C -59 74 rss Total gate charge Q - 9.7 12.2 g Gate-source charge Q V = -10 V V = -15 V, I = -3 A -1.3 - nC gs GS DS D Gate-drain charge Q -2 - gd Gate resistance R f = 1 MHz 9 - 24 g Turn-on delay time t -6.6 8.3 d(on) Rise time t -2.4 3 r V = -10 V, R = 10 DD L ns I -1 A, V = -10 V, R = 1 Turn-off delay time t D GEN g - 18.4 23 d(off) Fall time t -2.2 2.8 f b Source-Drain Diode Ratings and Characteristic Pulsed current I -- -11 A SM Forward voltage V I = 0.5 A, V = 0 V - -0.83 -1.1 V SD F GS Reverse recovery fall time t -9.1 - ns a Reverse recovery rise time t -4.8 - ns b V = -24 V, I = -1.5 A, di/dt = 100 A/s, Body diode reverse recovery DD FM t -14 28 ns rr R = 160 , L = 1 mH, pulse W = 2 s time Body diode reverse recovery Q - 9 18 C rr charge Body diode peak reverse I --1.4 - A RM(REC) recovery current Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0398-Rev. B, 06-May-2019 Document Number: 75315 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000