SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -150 DS AEC-Q101 qualified R ( ) at V = -10 V 1.77 DS(on) GS 100 % R and UIS tested g I (A) -0.84 D Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SOT-23 (TO-236) S D 3 G 2 S D 1 G P-Channel MOSFET Top View Marking Code: 8Rxxx ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2325ES-T1-GE3 ABSOLUTE MAXIMUMRATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -150 DS V Gate-Source Voltage V 20 GS T = 25 C -0.84 C Continuous Drain Current I D T = 125 C -0.48 C Continuous Source Current (Diode Conduction) I -3.7 A S a Pulsed Drain Current I -2 DM Single Pulse Avalanche Current I 4.8 AS L = 0.1 mH Single Pulse Avalanche Energy E 1.12 mJ AS T = 25 C 3 C a Maximum Power Dissipation P W D T = 125 C 1 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 166 thJA C/W Junction-to-Foot (Drain) R 50 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). S15-0188-Rev. B, 16-Feb-15 Document Number: 67847 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ2325ES www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -150 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -2.5 -3 -3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -150 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -150 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -150 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -10 V V 5 V -0.8 - - A D(on) GS DS V = -10 V I = -0.5 A - 1.3 1.77 GS D a Drain-Source On-State Resistance R V = -10 V I = -0.5 A, T = 125 C - - 3.4 DS(on) GS D J V = -10 V I = -0.5 A, T = 175 C - - 4.4 GS D J b Forward Transconductance g V = -15 V, I = -0.5 A - 2.2 - S fs DS D b Dynamic Input Capacitance C - 200 250 iss Output Capacitance C -2V = 0 V V = -50 V, f = 1 MHz025 pF oss GS DS Reverse Transfer Capacitance C -1722 rss c Total Gate Charge Q -7.4 10 g c Gate-Source Charge Q -1V = -10 V V = -75 V, I = -0.5 A.1- nC gs GS DS D c Gate-Drain Charge Q -2.9- gd Gate Resistance R f = 1 MHz 2.8 3.9 6.1 g c Turn-On Delay Time t -8 12 d(on) c Rise Time t -14 18 r V = -75 V, R = 150 DD L ns c I -0.5 A, V = -10 V, R = 1 D GEN g Turn-Off Delay Time t -1520 d(off) c Fall Time t -1014 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -2 A SM Forward Voltage V I = -0.5 A, V = 0 V - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0188-Rev. B, 16-Feb-15 Document Number: 67847 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000