X-On Electronics has gained recognition as a prominent supplier of SQ2389ES-T1_GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SQ2389ES-T1_GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SQ2389ES-T1_GE3 Vishay

SQ2389ES-T1_GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SQ2389ES-T1_GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
Datasheet: SQ2389ES-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3831 ea
Line Total: USD 1.92

Availability - 5111
Ships to you between
Fri. 14 Jun to Wed. 19 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2161 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8373
10 : USD 0.7202
25 : USD 0.6928
100 : USD 0.4944
250 : USD 0.4894
500 : USD 0.4268
1000 : USD 0.2904

7986 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 5
Multiples : 1
5 : USD 0.8371
50 : USD 0.6819
100 : USD 0.5577
500 : USD 0.398
1500 : USD 0.3754

5111 - WHS 3


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3831
50 : USD 0.3066
150 : USD 0.2738
500 : USD 0.2329
3000 : USD 0.2146
6000 : USD 0.2037

20155 - WHS 4


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6417
10 : USD 0.5543
100 : USD 0.3944
500 : USD 0.3392
1000 : USD 0.2875
3000 : USD 0.2657
6000 : USD 0.261
9000 : USD 0.253
24000 : USD 0.2495

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
LoadingGif

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We are delighted to provide the SQ2389ES-T1_GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2389ES-T1_GE3 and other electronic components in the MOSFET category and beyond.

The SQ2389ES-T1_GE3 is a MOSFET manufactured by Vishay. It is designed for use in automotive applications, as it is AEC-Q101 qualified. It has a maximum voltage rating of -40V for the Drain-Source voltage (Vds) and +/-20V for the Gate-Source voltage (Vgs). The MOSFET is suitable for high breakdown voltage applications, and will provide excellent power switching performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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