X-On Electronics has gained recognition as a prominent supplier of SQ3426EV-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ3426EV-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ3426EV-T1_GE3 Vishay

SQ3426EV-T1_GE3 electronic component of Vishay
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Part No.SQ3426EV-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQ3426EV-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6509 ea
Line Total: USD 0.65 
Availability - 56474
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
827
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3575
10 : USD 0.3493
25 : USD 0.3485
50 : USD 0.3479
100 : USD 0.3277
250 : USD 0.3272
500 : USD 0.3267

56474
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6509
10 : USD 0.5117
100 : USD 0.4002
500 : USD 0.3312
1000 : USD 0.3186
3000 : USD 0.2909
6000 : USD 0.2818
24000 : USD 0.276

2155
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.12
5 : USD 0.7616
25 : USD 0.6748
30 : USD 0.5852
83 : USD 0.553

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
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We are delighted to provide the SQ3426EV-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ3426EV-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ3426EV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS AEC-Q101 qualified R () at V = 10 V 0.042 DS(on) GS 100 % R and UIS tested g R () at V = 4.5 V 0.063 DS(on) GS I (A) 7 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 TSOP-6 Single (1, 2, 5, 6) D S 4 D 5 D 6 (3) G 3 G 2 D (4) S 1 D N-Channel MOSFET Top View Marking Code: 8Q ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3426EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 7 C Continuous Drain Current I D T = 125 C 4 C Continuous Source Current (Diode Conduction) I 6 A S a Pulsed Drain Current I 29 DM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 5 C a Maximum Power Dissipation P W D T = 125 C 1.6 C Operating Junction and Storage Temperature Range T , T - 55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 110 thJA C/W Junction-to-Foot (Drain) R 30 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). S15-2119-Rev. B, 07-Sep-15 Document Number: 65107 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ3426EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D V = 0 V, V = 12 V - - 100 DS GS Gate-Source Leakage I nA GSS V = 0 V, V = 20 V - - 300 DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 10 - - A D(on) GS DS V = 10 V I = 5 A - 0.032 0.042 GS D V = 10 V I = 5 A, T = 125 C - 0.056 - GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 5 A, T = 175 C - 0.071 - GS D J V = 4.5 V I = 4 A - 0.035 0.063 GS D a Forward Transconductance g V = 15 V, I = 4 A - 21 - S fs DS D b Dynamic Input Capacitance C - 560 720 iss Output Capacitance C -8V = 0 V V = 30 V, f = 1 MHz5110 pF oss GS DS Reverse Transfer Capacitance C -5570 rss c Total Gate Charge Q -6.3 12 g c Gate-Source Charge Q -2V = 4.5 V V = 30 V, I = 4 A.1- nC gs GS DS D c Gate-Drain Charge Q -4.1- gd Gate Resistance R f = 1 MHz 1.9 3.8 5.7 g c Turn-On Delay Time t -9 14 d(on) c Rise Time t -12 18 r V = 30 V, R = 7.5 DD L ns c I 4 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g929 d(off) c Fall Time t -711 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 29 A SM Forward Voltage V I = 1.6 A, V = 0 - 0.75 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2119-Rev. B, 07-Sep-15 Document Number: 65107 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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