X-On Electronics has gained recognition as a prominent supplier of DMN3110LCP3-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN3110LCP3-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN3110LCP3-7 Diodes Incorporated

Name: DMN3110LCP3-7
Brand: Diodes Incorporated
SKU: DMN3110LCP37_Diodes Incorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

DMN3110LCP3-7 electronic component of Diodes Incorporated

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Part No.	DMN3110LCP3-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFET BVDSS: 25V-30V
Datasheet:	DMN3110LCP3-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4209 ea
Line Total: USD 0.42

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

DMN3110LCP3-7 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 3000 Multiples : 3000	3000 : USD 0.1258 30000 : USD 0.1206 300000 : USD 0.1182

0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 3000 Multiples : 3000	3000 : USD 0.1469

0 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 0.4209 10 : USD 0.3579 30 : USD 0.3309 100 : USD 0.2973 500 : USD 0.2822 1000 : USD 0.2732

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 1.2168 10 : USD 0.5795 100 : USD 0.3148 500 : USD 0.2475 1000 : USD 0.1916 3000 : USD 0.1729 6000 : USD 0.1626 9000 : USD 0.147 24000 : USD 0.146

We are delighted to provide the DMN3110LCP3-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN3110LCP3-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

.The DMN3110LCP3-7 is a N-channel, logic level enhancement mode power MOSFET manufactured by Diodes Incorporated. The device is designed to improve the overall system performance in the most demanding applications with low gate charge and a low on-state resistance. It is housed in a lead-free, halogen-free SO8SM package and is rated for a 25V to 30V drain-source breakdown voltage (BVDSS). The DMN3110LCP3-7 is suitable for many switching and linear applications including computer power supplies, telecom, automotive, and consumer electronics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 3.2 A 3.2 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 52 mOhms 52 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 650 mV 650 mV
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.38 W 1.38 W
Mounting Style Smd/Smt Smd/Smt
Package / Case X2 - DSN1006 - 3 X2 - DSN1006 - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 12 V 12 V
Qg - Gate Charge 1.09 nC 1.09 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Diodes Incorporated Diodes Incorporated
Forward Transconductance - Min 3.3 S 3.3 S
Fall Time 9.5 ns 9.5 ns
Product Type Mosfet Mosfet
Rise Time 2.8 ns 2.8 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 16.5 ns 16.5 ns
Typical Turn-On Delay Time 4.8 ns 4.8 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Category MOSFET MOSFET
Brand Category Diodes Incorporated Diodes Incorporated