X-On Electronics has gained recognition as a prominent supplier of IPP80N08S406AKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP80N08S406AKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP80N08S406AKSA1 Infineon

IPP80N08S406AKSA1 electronic component of Infineon
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Part No.IPP80N08S406AKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-CHANNEL 75/80V
Datasheet: IPP80N08S406AKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9008 ea
Line Total: USD 1.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 500
Multiples : 1
500 : USD 1.9187

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.6742
10 : USD 3.0221
100 : USD 2.4324
500 : USD 2.016
1000 : USD 1.953

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9008

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 7.9224
10 : USD 2.8583
100 : USD 2.2887

   
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We are delighted to provide the IPP80N08S406AKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP80N08S406AKSA1 and other electronic components in the MOSFETs category and beyond.

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IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80N08S4-06 PG-TO263-3-2 4N0806 IPI80N08S4-06 PG-TO262-3-1 4N0806 IPP80N08S4-06 PG-TO220-3-1 4N0806 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 80 A D C GS 2) 80 T =100C, V =10V C GS 2) I T =25C 320 Pulsed drain current D,pulse C 2) E I =40A 270 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 75 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 150 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-20IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.0 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2.0 3.0 4.0 GS(th) DS GS D Zero gate voltage drain current I V =80V, V =0V - 0.01 1 A DSS DS GS V =80V, V =0V, DS GS - 5 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =80A - 5.0 5.8 mW DS(on) GS D V =10V, I =80A, GS D - 4.7 5.5 SMD version Rev. 1.0 page 2 2014-06-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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