DMNH4011SPS Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching ensures more reliable 40V 80A 10m V = 10V GS and robust end application Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Description Low R Minimizes On State Losses DS(ON) Low Input Capacitance This MOSFET is designed to minimize the on-state resistance <1.1mm Package Profile Ideal for Thin Applications (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH4011SPSQ) Engine Management Systems Body Control Electronics DCDC Converters Mechanical Data Case: PowerDI5060-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) S D Pin1 S D D S G D Top View Top View Bottom View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMNH4011SPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH4011SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 13 A Continuous Drain Current (V = 10V) (Note 6) I A GS D 10.8 T = +70C A 80 T = +25C C Continuous Drain Current (V = 10V) (Note 7) I A GS D 57 T = +100C C Maximum Continuous Body Diode Forward Current (Note 7) 80 A I S A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Avalanche Current, L = 1mH (Note 8) I A AS Avalanche Energy, L = 1mH (Note 8) E mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation 1.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 99 C/W R JA Total Power Dissipation W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W R JA Total Power Dissipation (Note 7) W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) R C/W JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 40V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 8.5 10 m V = 10V, I = 20A DS(ON) GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 10) 1405 Input Capacitance C iss 247 Output Capacitance C pF V = 20V, V = 0V, f = 1MHz oss DS GS 108 Reverse Transfer Capacitance Crss Gate Resistance 2.2 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 25.5 Q g Gate-Source Charge 4.6 nC Q V = 20V, V = 10V, I = 50A gs DS GS D Gate-Drain Charge 6.9 Q gd Turn-On Delay Time 4.6 t D(ON) 3.7 Turn-On Rise Time t V = 20V, V = 10V, R DD GS ns 16 Turn-Off Delay Time t I = 50A, R = 3.5 D(OFF) D G 5.1 Turn-Off Fall Time t F Body Diode Reverse Recovery Time t 22.1 ns RR I = 50A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 13.4 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMNH4011SPS April 2016 Diodes Incorporated www.diodes.com Document number: DS37401 Rev. 2 - 2