X-On Electronics has gained recognition as a prominent supplier of IXFL210N30P3 MOSFET across the USA, India, Europe, Australia, and various other global locations. IXFL210N30P3 MOSFET are a product manufactured by IXYS. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IXFL210N30P3 IXYS

IXFL210N30P3 electronic component of IXYS
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See Product Specifications
Part No.IXFL210N30P3
Manufacturer: IXYS
Category: MOSFET
Description: MOSFET N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFL210N30P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 35.8656 ea
Line Total: USD 35.87

Availability - 1
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 35.282
2 : USD 33.358
25 : USD 32.734

   
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We are delighted to provide the IXFL210N30P3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFL210N30P3 and other electronic components in the MOSFET category and beyond.

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The IXFL210N30P3 is an IGBT (Insulated-Gate Bipolar Transistor) manufactured by IXYS. It is a logic level device with voltage rating of 600V, current rating of 210A, and collector-emitter saturation voltage (Vce(sat)) of 2.5V. The device is housed in a TO-220FP package and has a maximum junction temperature of 175°C. The part is suitable for use in motor control, power conversion, and other power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
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IXYS SEMICONDUCTOR

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