X-On Electronics has gained recognition as a prominent supplier of SQ2318AES-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2318AES-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ2318AES-T1-GE3 Vishay

SQ2318AES-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SQ2318AES-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET
Datasheet: SQ2318AES-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
37: USD 0.2233 ea
Line Total: USD 8.26 
Availability - 0
MOQ: 37  Multiples: 37
Pack Size: 37
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 37
Multiples : 37
37 : USD 0.2274
100 : USD 0.2139

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 37
Multiples : 37
37 : USD 0.2233
100 : USD 0.2101

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQ2318AES-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2318AES-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SQ2318AES-T1-GE3 is a Vishay N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-side switching applications. It has an on-resistance of 23.18 ohms, a max drain source voltage (Vds) of 20V, a max drain current (Id) of 57A and a max power dissipation of 188W. It can operate up to a max junction temperature of 175°C and features low gate charge with fast switching times. This device is RoHS compliant and halogen-free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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