Product Information

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3 electronic component of Vishay

Datasheet
MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5089 ea
Line Total: USD 0.51

5532 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5123 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4933
10 : USD 0.4321
30 : USD 0.4065
100 : USD 0.3749
500 : USD 0.3197
1000 : USD 0.3119

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Technology
Vgs - Gate-Source Voltage
Tradename
Series
Brand
Factory Pack Quantity :
Category
Brand Category
LoadingGif

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Additional Infomation About Product

siliconix.The SQ2309ES-T1_GE3 is a MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS manufactured by Vishay siliconix. It is a low-voltage enhancement-mode vertical D-MOS power transistor that uses advanced Trench process technology which provides excellent performance in both linear and switching applications. It features a low On-resistance, fast switching and a highly break-down voltage. The device is RoHS compliant and provides superior protection, stability and system reliability. Additionally, it offers very low thermal resistance and is resistant to thermal shock.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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