X-On Electronics has gained recognition as a prominent supplier of SQ2309ES-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2309ES-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ2309ES-T1_GE3 Vishay

SQ2309ES-T1_GE3 electronic component of Vishay
SQ2309ES-T1_GE3 Vishay
SQ2309ES-T1_GE3 MOSFETs
SQ2309ES-T1_GE3  Semiconductors

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See Product Specifications
Part No. SQ2309ES-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
Datasheet: SQ2309ES-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5015 ea
Line Total: USD 0.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 5
Multiples : 1
5 : USD 0.6959
50 : USD 0.632
100 : USD 0.594
500 : USD 0.475
1500 : USD 0.4484

0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2365

0
Ship by Tue. 06 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.5015
10 : USD 0.4221
30 : USD 0.389
100 : USD 0.296
500 : USD 0.2133
1000 : USD 0.2053

0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 31
Multiples : 1
31 : USD 0.669
100 : USD 0.5869
500 : USD 0.5563
1000 : USD 0.4804
3000 : USD 0.2622
9000 : USD 0.2398
24000 : USD 0.2323
45000 : USD 0.2275

0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 31
Multiples : 32
31 : USD 0.5236
100 : USD 0.4557
500 : USD 0.4003
1000 : USD 0.3282
3000 : USD 0.2499
9000 : USD 0.2313
24000 : USD 0.2249
45000 : USD 0.2208

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Technology
Vgs - Gate-Source Voltage
Tradename
Series
Brand
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQ2309ES-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2309ES-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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siliconix.The SQ2309ES-T1_GE3 is a MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS manufactured by Vishay siliconix. It is a low-voltage enhancement-mode vertical D-MOS power transistor that uses advanced Trench process technology which provides excellent performance in both linear and switching applications. It features a low On-resistance, fast switching and a highly break-down voltage. The device is RoHS compliant and provides superior protection, stability and system reliability. Additionally, it offers very low thermal resistance and is resistant to thermal shock.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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