X-On Electronics has gained recognition as a prominent supplier of SPW20N60S5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPW20N60S5 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPW20N60S5 Infineon

SPW20N60S5 electronic component of Infineon
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Part No.SPW20N60S5
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 600V 20A TO247-3 CoolMOS S5
Datasheet: SPW20N60S5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.665 ea
Line Total: USD 5.66 
Availability - 1497
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1497
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.665
10 : USD 5.412
25 : USD 5.335
100 : USD 5.093
240 : USD 4.389
480 : USD 4.378
1200 : USD 4.367
2640 : USD 3.696

25
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.904
3 : USD 6.09
8 : USD 5.768

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
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Transistor Type
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We are delighted to provide the SPW20N60S5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPW20N60S5 and other electronic components in the MOSFETs category and beyond.

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SPW20N60S5 Cool MOS Power Transistor V 600 V DS Feature R 0.19 DS(on) New revolutionary high voltage technology I 20 A D Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 20 C T = 100 C 13 C 40 Pulsed drain current, t limited by T I p jmax D puls 690 mJ Avalanche energy, single pulse E AS I = 10 A, V = 50 V D DD 1) E 1 Avalanche energy, repetitive t limited by T AR AR jmax I = 20 A, V = 50 V D DD 20 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 208 W C tot C Operating and storage temperature T , T -55... +150 j stg Page 1 Rev. 2.5 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-ASPW20N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 20 V/ns V = 480 V, I = 20 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.6 K/W Thermal resistance, junction - case thJC R - 50 Thermal resistance, junction - ambient, leaded - thJA Soldering temperature, wavesoldering T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =20A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage Gate threshold voltage V I =1000, V =V 3.5 4.5 5.5 D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.5 5 j T =150C - - 250 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =13A, Drain-source on-state resistance R GS D DS(on) T =25C - 0.16 0.19 j T =150C - 0.43 - j R f=1MHz, open Drain - 12 - Gate input resistance G Page 2 2008-02-12 Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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