SPW35N60C3 TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max New revolutionary high voltage technology R 0.1 DS(on),max Ultra low gate charge I 34.6 A D Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances PG-TO247 Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C 34.6 Continuous drain current A D C T =100 C 21.9 C 1) I T =25 C 103.8 Pulsed drain current D,pulse C E I =17.3 A, V =50 V Avalanche energy, single pulse 1500 mJ AS D DD 1),2) E I =34.6 A, V =50 V 1.5 Avalanche energy, repetitive t AR D DD AR 1) I 34.6 A Avalanche current, repetitive t AR AR I =34.6 A, D Drain source voltage slope dv /dt 50 V/ns V =480 V, T =125 C DS j Gate source voltage V static 20 V GS V AC (f >1 Hz) 30 GS P T =25 C 313 Power dissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.5 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-ASPW35N60C3 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.4 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient 1.6 mm (0.063 in.) T Soldering temperature, wavesoldering - - 260 C sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D V V =0 V, I =34.6 A Avalanche breakdown voltage - 700 - (BR)DS GS D Gate threshold voltage V V =V , I =1.9 mA 2.1 3 3.9 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =600 V, V =0 V, DS GS - - 100 T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =21.9 A, GS D R Drain-source on-state resistance - 0.081 0.1 DS(on) T =25 C j V =10 V, I =21.9 A, GS D - 0.2 - T =150 C j R Gate resistance f =1 MHz, open drain - 0.6 - G V >2 I R , DS D DS(on)max g Transconductance -36 - S fs I =21.9 A D Rev. 2.5 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A