SUP40012EL www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES TO-220AB TrenchFET power MOSFET Maximum 175 C junction temperature Excellent R -Q and R -Q FOM reduce DS g DS oss power loss from conduction and switching to enable high efficiency 100 % R and UIS tested g Material categorization: for definitions of compliance SS please see www.vishay.com/doc 99912 D G Top View APPLICATIONS D Power supply - Secondary synchronous rectification PRODUCT SUMMARY V (V) 40 DC/DC converter DS R max. ( ) at V = 10 V 0.00179 DS(on) GS Power tools G R max. ( ) at V = 4.5 V 0.00236 DS(on) GS Motor drive switch Q typ. (nC) 130 g Battery management d I (A) 150 D S Configuration Single N-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and halogen-free SUP40012EL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS d T = 25 C 150 C Continuous drain current (T = 150 C) I J D d T = 70 C 150 C A Pulsed drain current (t = 100 s) I 300 DM Avalanche current I 50 AS a Single avalanche energy L = 0.1 mH E 125 mJ AS b T = 25 C 150 C a Maximum power dissipation P W D b T = 125 C 50 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-ambient (PCB mount) R 40 thJA C/W Junction-to-case (drain) R 1 thJC Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1 square PCB (FR4 material) d. Package limited S18-1127-Rev. A, 12-Nov-2018 Document Number: 76965 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP40012EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate threshold voltage V V = V , I = 250 A 1 - 2.5 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS A Zero gate voltage drain current I V = 30 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 30 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-state drain current I V 10 V, V = 10 V 120 - - A D(on) DS GS V = 10 V, I = 30 A - 0.00149 0.00179 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 20 A - 0.00196 0.00236 GS D a Forward transconductance g V = 15 V, I = 30 A - 230 - S fs DS D b Dynamic Input capacitance C - 10 930 - iss Output capacitance C V = 0 V, V = 20 V, f = 1 MHz - 2041 - pF oss GS DS Reverse transfer capacitance C - 101 - rss c Total gate charge Q - 130 195 g c Gate-source charge Q V = 20 V, V = 10 V, I = 20 A -33.6 - DS GS D gs nC c Gate-drain charge Q -6.7 - gd V = 20 V, V = 0 V Output charge Q -64 96 oss DS GS Gate resistance R f = 1 MHz 0.36 1.8 3.6 g c Turn-on delay time t -25 50 d(on) c Rise time t -12 24 r V = 20 V, R = 2 DD L ns 10 A, V = 10 V, R = 1 c I D GEN g Turn-off delay time t - 65 130 d(off) c Fall time t -18 36 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed current (t = 100 s) I - - 300 A SM a I = 10 A, V = 0 V Forward voltage V -0.8 1.5 V SD F GS Reverse recovery time t - 58 116 ns rr Peak reverse recovery charge I -2.1 4.2 A RM(REC) I = 10 A, di/dt = 100 A/s Reverse recovery charge Q F - 72 144 nC rr Reverse recovery fall time t -32 - a ns Reverse recovery rise time t -26 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1127-Rev. A, 12-Nov-2018 Document Number: 76965 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000