X-On Electronics has gained recognition as a prominent supplier of SQM50034EL_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM50034EL_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM50034EL_GE3 Vishay

SQM50034EL_GE3 electronic component of Vishay
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Part No.SQM50034EL_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Automotive N-Channel 60 V D-S 175C MOSFET
Datasheet: SQM50034EL_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2 ea
Line Total: USD 2.2 
Availability - 8401
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8401
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.2
10 : USD 1.617
100 : USD 1.265
250 : USD 1.122
500 : USD 1.0142
800 : USD 1.0032
2400 : USD 0.9757
5600 : USD 0.9735

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQM50034EL_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM50034EL_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM50034EL www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES TO-263 TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g AEC-Q101 qualified Material categorization: for definitions of compliance please see SS DD www.vishay.com/doc 99912 GG Top View D PRODUCT SUMMARY V (V) 60 DS R ( ) at V = 10 V 0.0039 G DS(on) GS R ( ) at V = 4.5 V 0.0050 DS(on) GS I (A) 100 D N-Channel MOSFET Configuration Single S Package TO-263 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS a T = 25 C 100 C Continuous drain current I D T = 125 C 80 C a Continuous source current (diode conduction) I 100 A S b Pulsed drain current I 320 DM Single pulse avalanche current I 48 AS L = 0.1 mH Single pulse avalanche energy E 115 mJ AS T = 25 C 150 C b Maximum power dissipation P W D T = 125 C 50 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 1 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S19-0407-Rev. A, 06-May-2019 Document Number: 77032 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM50034EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 60 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 300 A GS DS J a On-state drain current I V = 10 V V 5 V 100 - - A D(on) GS DS V = 10 V I = 20 A - 0.0032 0.0039 GS D V = 4.5 V I = 15 A - 0.0041 0.0050 GS D a Drain-source on-state resistance R DS(on) V = 10 V I = 20 A, T = 125 C - - 0.0063 GS D J V = 10 V I = 20 A, T = 175 C - - 0.0075 GS D J b Forward transconductance g V = 15 V, I = 20 A - 97 - S fs DS D b Dynamic Input capacitance C - 4425 6100 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 1989 2800 pF oss GS DS Reverse transfer capacitance C -67 95 rss c Total gate charge Q -60 90 g c Gate-source charge Q V = 10 V V = 30 V, I = 50 A -16.3 - nC gs GS DS D c Gate-drain charge Q -4.8 - gd Gate resistance R f = 1 MHz 0.6 1.24 1.9 g c Turn-on delay time t -15 25 d(on) c Rise time t -7 15 r V = 30 V, R = 0.6 DD L ns c I 50 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -33 50 d(off) c Fall time t -7 15 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I - - 320 A SM Forward voltage V I = 25 A, V = 0 V - 0.81 1.5 V SD F GS Body diode reverse recovery time t -42 85 ns rr Body diode reverse recovery charge Q -34 70 nC rr I = 30 A, di/dt = 100 A/s F Reverse recovery fall time t -15 - a ns Reverse recovery rise time t -27 - b Body diode peak reverse recovery current I --1.45 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0407-Rev. A, 06-May-2019 Document Number: 77032 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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