X-On Electronics has gained recognition as a prominent supplier of SQM50P03-07-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM50P03-07-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM50P03-07-GE3 Vishay

SQM50P03-07-GE3 electronic component of Vishay
SQM50P03-07-GE3 Vishay
SQM50P03-07-GE3 MOSFETs
SQM50P03-07-GE3  Semiconductors

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Part No. SQM50P03-07-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Siliconix MOSFET P-Channel 30V Automotive MOSFET
Datasheet: SQM50P03-07-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.2896 ea
Line Total: USD 1031.68 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 2.6621
10 : USD 2.1382
100 : USD 1.947
250 : USD 1.7558
500 : USD 1.5859
1000 : USD 1.324

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 800
Multiples : 800
800 : USD 1.2896

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SQM50P03-07-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM50P03-07-GE3 and other electronic components in the MOSFETs category and beyond.

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SQM50P03-07 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) - 30 DS Package with Low Thermal Resistance R ( ) at V = - 10 V 0.0070 DS(on) GS 100 % R and UIS Tested g R ( ) at V = - 4.5 V 0.0110 DS(on) GS d AEC-Q101 Qualified I (A) - 50 D Material categorization: Configuration Single For definitions of compliance please see www.vishay.com/doc 99912 S TO-263 G G D S Top View D P-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM50P03-07-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 50 C a Continuous Drain Current I D T = 125 C - 50 C a Continuous Source Current (Diode Conduction) I - 50 A S b Pulsed Drain Current I - 200 DM Single Pulse Avalanche Current I - 50 AS L = 0.1 mH Single Pulse Avalanche Energy E 125 mJ AS T = 25 C 150 C b Maximum Power Dissipation P W D T = 125 C 50 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S12-1847-Rev. B, 30-Jul-12 Document Number: 67044 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM50P03-07 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 30 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 30 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 30 V, T = 175 C - - - 250 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 120 - - A D(on) GS DS V = - 10 V I = - 30 A - 0.0050 0.0070 GS D V = - 10 V I = - 30 A, T = 125 C - - 0.0102 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 30 A, T = 175 C - - 0.0118 GS D J V = - 4.5 V I = - 20 A - 0.0089 0.0110 GS D b Forward Transconductance g V = - 15 V, I = - 30 A - 62 - S fs DS D b Dynamic Input Capacitance C - 4304 5380 iss Output Capacitance C -V = 0 V V = - 25 V, f = 1 MHz764955 pF oss GS DS Reverse Transfer Capacitance C -680850 rss c Total Gate Charge Q - 103.5 155 g c Gate-Source Charge Q -V = - 10 V V = - 15 V, I = - 75 A14.3- nC gs GS DS D c Gate-Drain Charge Q -26.9- gd Gate Resistance R f = 1 MHz 1.4 2.85 4.3 g c Turn-On Delay Time t -11 17 d(on) c Rise Time t -10 15 r V = - 15 V, R = 0.2 DD L ns c I - 75 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -6395 d(off) c Fall Time t -2639 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 200 A SM Forward Voltage V I = - 45 A, V = 0 V - - 0.9 - 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1847-Rev. B, 30-Jul-12 Document Number: 67044 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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