X-On Electronics has gained recognition as a prominent supplier of SQJ459EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ459EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ459EP-T1_GE3 Vishay

SQJ459EP-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQJ459EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQJ459EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.474 ea
Line Total: USD 1.47 
Availability - 28264
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1242
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1525
10 : USD 1.0027
25 : USD 1.0001
100 : USD 0.8477
250 : USD 0.8276
500 : USD 0.7812
1000 : USD 0.7348

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.683
6000 : USD 0.6766

4176
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1907
10 : USD 0.9962
30 : USD 0.8894
100 : USD 0.7691
500 : USD 0.7156
1000 : USD 0.6909

28264
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.474
10 : USD 1.0538
100 : USD 0.7777
500 : USD 0.6534
1000 : USD 0.6127
3000 : USD 0.6028
6000 : USD 0.5797

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQJ459EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ459EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SQJ459EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -60 DS 100 % R and UIS tested g R () at V = -10 V 0.018 DS(on) GS c AEC-Q101 qualified R () at V = -4.5 V 0.024 DS(on) GS I (A) -52 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package PowerPAK SO-8L S PowerPAK SO-8L Single G D 1 S 2 S 3 D S 4 P-Channel MOSFET 1 G Top View Bottom View ABSOLUE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -52 C Continuous Drain Current I D T = 125 C -30 C Continuous Source Current (Diode Conduction) I -75 A S a Pulsed Drain Current I -200 DM Single Pulse Avalanche Current I -40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 83 C a Maximum Power Dissipation P W D T = 125 C 27 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 65 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-2327-Rev. A, 05-Oct-15 Document Number: 66963 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 mmSQJ459EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -10 V V 5 V -30 - - A D(on) GS DS V = -10 V I = -3.5 A - 0.0155 0.0180 GS D V = -4.5 V I = -3.1 A - 0.0206 0.0240 GS D a Drain-Source On-State Resistance R DS(on) V = -10 V I = -3.5 A, T = 125 C - 0.0255 - GS D J V = -10 V I = -3.5 A, T = 175 C - 0.0310 - GS D J b Forward Transconductance g V = -30 V, I = -15 A - 40 - S fs DS D b Dynamic Input Capacitance C - 3448 4586 iss Output Capacitance C -V = 0 V V = -30 V, f = 1 MHz374497 pF oss GS DS Reverse Transfer Capacitance C -234312 rss c Total Gate Charge Q -73 108 g c Gate-Source Charge Q -1V = -10 V V = -40 V, I = -15 A0- nC gs GS DS D c Gate-Drain Charge Q -20- gd Gate Resistance R f = 1 MHz 0.5 1.1 2 g c Turn-On Delay Time t -12 17 d(on) c Rise Time t -19 26 r V = -30 V, R = 30 DD L ns I -1 A, V = -10 V, R = 6 c D GEN g Turn-Off Delay Time t -88117 d(off) c Fall Time t -4560 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -200 A SM Forward Voltage V I = -2.5 A, V = 0 - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2327-Rev. A, 05-Oct-15 Document Number: 66963 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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