5.13 mm SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 80 DS Definition R () at V = - 10 V 0.025 DS(on) GS TrenchFET Power MOSFET R () at V = - 6 V 0.029 DS(on) GS d AEC-Q101 Qualified I (A) - 32 D 100 % R and UIS Tested g Configuration Single Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8L Single S G D 4 G 3 S 2 D S 1 P-Channel MOSFET S ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ469EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 80 DS V Gate-Source Voltage V 20 GS T = 25 C - 32 C a Continuous Drain Current I D T = 125 C - 24 C a Continuous Source Current (Diode Conduction) I - 32 A S b Pulsed Drain Current I - 128 DM Single Pulse Avalanche Current I - 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 100 C b Maximum Power Dissipation P W D T = 125 C 33 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 65 thJA C/W Junction-to-Case (Drain) R 1.5 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2288-Rev. B, 28-Nov-11 Document Number: 65936 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mm SQJ469EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 80 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 80 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 80 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 80 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V = -5 V - 30 - - A D(on) GS DS V = - 10 V I = - 10.2 A - 0.021 0.025 GS D V = - 10 V T = 125 C - 0.036 0.043 GS J a Drain-Source On-State Resistance R DS(on) V = - 10 V T = 175 C - 0.045 0.054 GS J V = - 6 V I = - 8.1 A - 0.024 0.029 GS D b Forward Transconductance g V = - 15 V, I = - 10.2 A - 35 - S fs DS D b Dynamic Input Capacitance C - 4250 5100 iss Output Capacitance C -V = 0 V V = - 40 V, f = 1 MHz250300 pF oss GS DS Reverse Transfer Capacitance C -215260 rss c Total Gate Charge Q - 101 155 g c Gate-Source Charge Q -1V = - 10 V V = - 40 V, I = - 10.2 A3- nC gs GS DS D c Gate-Drain Charge Q -21- gd Gate Resistance R f = 1 MHz 1.8 3.2 4.6 g c Turn-On Delay Time t -16 20 d(on) c Rise Time t -16 20 r V = - 40 V, R = 4.9 DD L ns c I - 8.1 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -150180 d(off) c Fall Time t -4050 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 128 A SM Forward Voltage V I = - 8.1 A, V = 0 - - 0.8 - 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2288-Rev. B, 28-Nov-11 Document Number: 65936 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000