SQM90142E www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES TrenchFET power MOSFET TO-263 Package with low thermal resistance AEC-Q101 qualified 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SS DD GG Top View D PRODUCT SUMMARY G V (V) 200 DS R ( ) at V = 10 V 0.0153 DS(on) GS I (A) 95 D N-Channel MOSFET S Configuration Single Package TO-263 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 95 C Continuous drain current I D T = 125 C 55 C a Continuous source current (diode conduction) I 120 A S b Pulsed drain current I 170 DM Single pulse avalanche current I 64 AS L = 0.1 mH Single pulse avalanche energy E 205 mJ AS T = 25 C 375 C b Maximum power dissipation P W D T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-2613-Rev. A, 26-Dec-16 Document Number: 77719 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM90142E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 200 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 200 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 200 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 200 V, T = 175 C - - 600 GS DS J a On-state drain current I V = 10 V V 5 V 40 - - A D(on) GS DS V = 10 V I = 20 A - 0.0127 0.0153 GS D a Drain-source on-state resistance R V = 10 V I = 20 A, T = 125 C - - 0.0310 DS(on) GS D J V = 10 V I = 20 A, T = 175 C - - 0.0404 GS D J b Forward transconductance g V = 15 V, I = 20 A - 54 - S fs DS D b Dynamic Input capacitance C - 3200 4200 iss Output capacitance C -V = 0 V V = 25 V, f = 1 MHz13001750 pF oss GS DS Reverse transfer capacitance C -80110 rss c Total gate charge Q -55 85 g c Gate-source charge Q -1V = 10 V V = 100 V, I = 9 A4- nC gs GS DS D c Gate-drain charge Q -16.5- gd Gate Resistance R f = 1 MHz 1.35 2.74 4.20 g c Turn-on delay time t -17 30 d(on) c Rise time t -8 15 r V = 100 V, R = 11.1 DD L ns c I 9 A, V = 10 V, R = 1 Turn-off delay time t -3D GEN g960 d(off) c Fall time t -1630 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 170 A SM Forward voltage V I = 20 A, V = 0 V - 0.82 1.5 V SD F GS Body diode reverse recovery time t - 129 260 ns rr Body diode reverse recovery charge Q - 685 1400 nC rr I = 10 A, di/dt = 100 A/s F Reverse recovery fall time t - 106 - ns a Reverse recovery rise time t -26 - b Body diode peak reverse recovery I --11 - A RM(REC) current Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2613-Rev. A, 26-Dec-16 Document Number: 77719 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000