X-On Electronics has gained recognition as a prominent supplier of IPT65R105G7XTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPT65R105G7XTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPT65R105G7XTMA1 Infineon

IPT65R105G7XTMA1 electronic component of Infineon
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Part No.IPT65R105G7XTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPT65R105G7XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.6231 ea
Line Total: USD 3.62 
Availability - 3395
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3395
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.6231
10 : USD 3.5685
25 : USD 3.5152
50 : USD 3.4606
100 : USD 3.406
250 : USD 3.3527
500 : USD 3.2981
1000 : USD 3.2435
3000 : USD 3.1902

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
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Factory Pack Quantity :
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Typical Turn-Off Delay Time
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the IPT65R105G7XTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPT65R105G7XTMA1 and other electronic components in the MOSFETs category and beyond.

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IPT65R105G7 MOSFET HSOF 650V CoolMOS C7 Gold series (G7) SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of Tab the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible Tab SMD solution for high current topologies such as PFC up to 3kW 1 2 3 8 4 7 5 Features 6 6 7 5 8 4 3 C7 Gold gives best in class FOM R *E and R *Q . 2 DS(on) oss DS(on) g 1 C7 Gold technology enables best in class R in smallest footprint. DS(on) th TOLL package has inbuilt 4 pin Kelvin Source configuration and low parasitic source inductance (~1nH). TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection grooved leads. Drain Tab TOLL SMD package combined with lead free die attach process enables improved thermal performance R . th *1 Gate Pin 1 Benefits Driver Source Source C7 Gold FOM R *Q is 14% better than previous C7 650V enabling Pin 2 DS(on) g Pin 3-8 faster switching leading to higher efficiency. *1: Internal body diode 2 C7 Gold can reach 33m in in TOLL 115mm footprint, whereas previous 2 2 BIC C7 650V was 45m in 150mm D PAK footprint. Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. TOLL package is easy to use and has the highest quality standards. Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible. Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 105 m DS(on),max Q 35 nC g.typ I 75 A D,pulse ID,continuous Tj<150C 32 A E 400V 4.2 J oss Body diode di/dt 55 A/s Type / Ordering Code Package Marking Related Links IPT65R105G7 PG-HSOF-8 65R105G7 see Appendix A Final Data Sheet 1 Rev. 2.3, 2020-10-28650V CoolMOS C7 Gold series (G7) SJ Power Device IPT65R105G7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.3, 2020-10-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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