DMN4008LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Low R ensures on state losses are minimized
DS(ON)
I max
D
Small Form Factor Thermally Efficient Package Enables Higher
V R max
(BR)DSS DS(ON)
T = +25C
A
Density End Products
7.5m @ V = 10V 14.4A
GS
40V
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
10m @ V = 4.5V 12.5A
GS
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
Mechanical Data
ideal for high efficiency power management applications.
Case: POWERDI 3333-8
Backlighting
Case Material: Molded Plastic,Gree Molding Compound.
Power Management Functions
UL Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
POWERDI 3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN4008LFG-7 2000/Tape & Reel
POWERDI 3333-8
DMN4008LFG-13 3000/Tape & Reel
POWERDI 3333-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN4008LFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 40 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 14.4
A
I A
D
State 11.6
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 19.2
A
t<10s I A
D
15.4
T = +70C
A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) 90 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 6) 3 A
I
S
Avalanche Current, L = 0.1mH I 38 A
AS
Avalanche Energy, L = 0.1mH E 75 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 1.0 W
D
Steady state 119
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 66
Total Power Dissipation (Note 6) P 2.3 W
D
Steady state 53
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 30
C/W
Thermal Resistance, Junction to Case (Note 6) R 6.1
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I 1 A V = 40V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 3 V
V V = V , I = 250 A
GS(th) DS GS D
5.5 7.5
V = 10V, I = 10A
GS D
Static Drain-Source On-Resistance 7 10 m
R V = 4.5V, I = 8A
DS (ON) GS D
20
V = 3.3V, I = 6A
GS D
Diode Forward Voltage
V 0.7 1.1 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 3537 pF
iss
V = 20V, V = 0V,
DS GS
Output Capacitance C 257 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 215 pF
rss
0.9
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
34
Total Gate Charge (V = 4.5V) Q nC
GS g
Total Gate Charge (V = 10V) Q 74 nC
GS g
V = 20V, I = 10A
DS D
Gate-Source Charge 10.2 nC
Q
gs
Gate-Drain Charge 12.5 nC
Q
gd
Turn-On Delay Time 8.2 ns
t
D(on)
Turn-On Rise Time 14.1 ns
t V = 10V, V = 20V,
r GS DS
69.7
Turn-Off Delay Time t ns R = 6 , I = 10A
D(off) G D
24.4
Turn-Off Fall Time t ns
f
Body Diode Reverse Recovery Time t 18.5 nS
rr
I = 10A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q 12.0 nC
rr
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6 July 2014
DMN4008LFG
Diodes Incorporated
www.diodes.com
Document number: DS36908 Rev. 2 - 2
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