IPB240N04S4-R9 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.87 mW DS(on) I 240 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB240N04S4-R9 PG-TO263-7-3 4N04R9 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 240 A T =25C, V =10V D C GS T =100 C, C 240 2) V =10 V GS 2) I T =25 C 960 Pulsed drain current D,pulse C 2) E I =120 A 750 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 190 A AS V Gate source voltage - 20 V GS P T =25 C Power dissipation 300 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2014-04-07IPB240N04S4-R9 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.5 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =230 A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =18 V, V =0 V, DS GS - 20 240 2) T =85 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =10 V, I =100 A Drain-source on-state resistance - - 0.87 m DS(on) GS D Rev. 1.1 page 2 2014-04-07