DMN3016LFDF-7 Diodes Incorporated

DMN3016LFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications I Max D BV R Max 2 DSS DS(ON) PCB Footprint of 4mm TA = +25C Low Gate Threshold Voltage 12m VGS = 10V 10A Low On-Resistance 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m VGS = 4.5V 8.5A Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and Description and Applications manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can This MOSFET is designed to minimize the on-state resistance be found at (R ) and yet maintain superior switching performance, making it DS(ON) DMN3016LFDF Marking Information Site 1 NZ = Product Type Marking Code N4 YM = Date Code Marking NZ Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 NZ = Product Type Marking Code YWX = Date Code Marking NZO7 Y = Year (ex: 9 = 2019) W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 Code 9 0 1 2 3 4 5 6 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 DMN3016LFDF November 2019 Diodes Incorporated www.diodes.com Document number: DS37735 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION YM YWX